Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.112385
Title: Charging dynamics of integrated circuit passivation layer probe holes in the electron beam tester
Authors: Phang, J.C.H. 
Sim, K.S. 
Chan, D.S.H. 
Issue Date: 1994
Citation: Phang, J.C.H., Sim, K.S., Chan, D.S.H. (1994). Charging dynamics of integrated circuit passivation layer probe holes in the electron beam tester. Applied Physics Letters 65 (26) : 3341-3343. ScholarBank@NUS Repository. https://doi.org/10.1063/1.112385
Abstract: Numerical simulations show that the sidewall of a probe hole in the SiO2 passivation layer of an integrated circuit charges negatively when a 1 keV beam is probing a test point inside the probe hole. The negative charges on the sidewalls create a local electric field that suppresses the low-energy secondary electrons and at the same time focuses the higher-energy secondary electrons. These potential barrier and lens effects degrade the detected secondary electron signal and may have significant consequences for voltage contrast measurements. © 1994 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/80325
ISSN: 00036951
DOI: 10.1063/1.112385
Appears in Collections:Staff Publications

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