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|Title:||Charging dynamics of integrated circuit passivation layer probe holes in the electron beam tester||Authors:||Phang, J.C.H.
|Issue Date:||1994||Citation:||Phang, J.C.H., Sim, K.S., Chan, D.S.H. (1994). Charging dynamics of integrated circuit passivation layer probe holes in the electron beam tester. Applied Physics Letters 65 (26) : 3341-3343. ScholarBank@NUS Repository. https://doi.org/10.1063/1.112385||Abstract:||Numerical simulations show that the sidewall of a probe hole in the SiO2 passivation layer of an integrated circuit charges negatively when a 1 keV beam is probing a test point inside the probe hole. The negative charges on the sidewalls create a local electric field that suppresses the low-energy secondary electrons and at the same time focuses the higher-energy secondary electrons. These potential barrier and lens effects degrade the detected secondary electron signal and may have significant consequences for voltage contrast measurements. © 1994 American Institute of Physics.||Source Title:||Applied Physics Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/80325||ISSN:||00036951||DOI:||10.1063/1.112385|
|Appears in Collections:||Staff Publications|
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