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|Title:||Characterization of the plasma-induced effective mobility degradation of LATID NMOSFETs||Authors:||Lou, C.L.
|Issue Date:||1997||Citation:||Lou, C.L.,Song, J.,Tan, C.B.,Chim, W.K.,Chan, D.S.H.,Pan, Y. (1997). Characterization of the plasma-induced effective mobility degradation of LATID NMOSFETs. International Symposium on Plasma Process-Induced Damage, P2ID, Proceedings : 102-104. ScholarBank@NUS Repository.||Abstract:||The effective mobility of NMOSFETs with different plasma damage is characterized by a new technique. The applicability of this technique is verified. The effective mobility is observed to be more sensitive than the maximum linear transconductance as a measure of the quality of the Si-SiO2 interface.||Source Title:||International Symposium on Plasma Process-Induced Damage, P2ID, Proceedings||URI:||http://scholarbank.nus.edu.sg/handle/10635/81388|
|Appears in Collections:||Staff Publications|
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