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|Title:||Charge trapping and breakdown mechanism in HfAlO/TaN gate stack analyzed using carrier separation||Authors:||Loh, W.-Y.
|Keywords:||Gate leakage current
|Issue Date:||Dec-2004||Citation:||Loh, W.-Y., Cho, B.J., Joo, M.S., Li, M.-F., Chan, D.S.H., Mathew, S., Kwong, D.-L. (2004-12). Charge trapping and breakdown mechanism in HfAlO/TaN gate stack analyzed using carrier separation. IEEE Transactions on Device and Materials Reliability 4 (4) : 696-703. ScholarBank@NUS Repository. https://doi.org/10.1109/TDMR.2004.838416||Abstract:||Charge trapping and breakdown mechanism in p- and n-channel MOSFETs with an HfAl xO y and TaN metal electrode are investigated. Using carrier separation measurement technique, it is possible to clearly distinguish two different breakdown mechanisms: a high-K bulk initiated and an interfacial layer initiated breakdown. A model of charge trapping at different spatial locations in HfAl xO y with a TaN gate structure is proposed to explain the polarity dependence of charge trapping characteristics and breakdown mechanisms.||Source Title:||IEEE Transactions on Device and Materials Reliability||URI:||http://scholarbank.nus.edu.sg/handle/10635/82049||ISSN:||15304388||DOI:||10.1109/TDMR.2004.838416|
|Appears in Collections:||Staff Publications|
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