Please use this identifier to cite or link to this item: https://doi.org/10.1109/TDMR.2004.838416
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dc.titleCharge trapping and breakdown mechanism in HfAlO/TaN gate stack analyzed using carrier separation
dc.contributor.authorLoh, W.-Y.
dc.contributor.authorCho, B.J.
dc.contributor.authorJoo, M.S.
dc.contributor.authorLi, M.-F.
dc.contributor.authorChan, D.S.H.
dc.contributor.authorMathew, S.
dc.contributor.authorKwong, D.-L.
dc.date.accessioned2014-10-07T04:24:47Z
dc.date.available2014-10-07T04:24:47Z
dc.date.issued2004-12
dc.identifier.citationLoh, W.-Y., Cho, B.J., Joo, M.S., Li, M.-F., Chan, D.S.H., Mathew, S., Kwong, D.-L. (2004-12). Charge trapping and breakdown mechanism in HfAlO/TaN gate stack analyzed using carrier separation. IEEE Transactions on Device and Materials Reliability 4 (4) : 696-703. ScholarBank@NUS Repository. https://doi.org/10.1109/TDMR.2004.838416
dc.identifier.issn15304388
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82049
dc.description.abstractCharge trapping and breakdown mechanism in p- and n-channel MOSFETs with an HfAl xO y and TaN metal electrode are investigated. Using carrier separation measurement technique, it is possible to clearly distinguish two different breakdown mechanisms: a high-K bulk initiated and an interfacial layer initiated breakdown. A model of charge trapping at different spatial locations in HfAl xO y with a TaN gate structure is proposed to explain the polarity dependence of charge trapping characteristics and breakdown mechanisms.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/TDMR.2004.838416
dc.sourceScopus
dc.subjectGate leakage current
dc.subjectGate stacks
dc.subjectHigh-K dielectrics
dc.subjectReliability
dc.subjectTunneling
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/TDMR.2004.838416
dc.description.sourcetitleIEEE Transactions on Device and Materials Reliability
dc.description.volume4
dc.description.issue4
dc.description.page696-703
dc.identifier.isiut000226617100017
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