Please use this identifier to cite or link to this item: https://doi.org/10.1109/TDMR.2004.838416
Title: Charge trapping and breakdown mechanism in HfAlO/TaN gate stack analyzed using carrier separation
Authors: Loh, W.-Y. 
Cho, B.J. 
Joo, M.S. 
Li, M.-F. 
Chan, D.S.H. 
Mathew, S.
Kwong, D.-L.
Keywords: Gate leakage current
Gate stacks
High-K dielectrics
Reliability
Tunneling
Issue Date: Dec-2004
Citation: Loh, W.-Y., Cho, B.J., Joo, M.S., Li, M.-F., Chan, D.S.H., Mathew, S., Kwong, D.-L. (2004-12). Charge trapping and breakdown mechanism in HfAlO/TaN gate stack analyzed using carrier separation. IEEE Transactions on Device and Materials Reliability 4 (4) : 696-703. ScholarBank@NUS Repository. https://doi.org/10.1109/TDMR.2004.838416
Abstract: Charge trapping and breakdown mechanism in p- and n-channel MOSFETs with an HfAl xO y and TaN metal electrode are investigated. Using carrier separation measurement technique, it is possible to clearly distinguish two different breakdown mechanisms: a high-K bulk initiated and an interfacial layer initiated breakdown. A model of charge trapping at different spatial locations in HfAl xO y with a TaN gate structure is proposed to explain the polarity dependence of charge trapping characteristics and breakdown mechanisms.
Source Title: IEEE Transactions on Device and Materials Reliability
URI: http://scholarbank.nus.edu.sg/handle/10635/82049
ISSN: 15304388
DOI: 10.1109/TDMR.2004.838416
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