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|Title:||Charge trapping as the dominant degradation mechanism during plasma processing of 0.25 μm technology devices||Authors:||Song, J.
|Issue Date:||1999||Citation:||Song, J.,Chim, W.K.,Chan, D.S.H.,Pan, Y. (1999). Charge trapping as the dominant degradation mechanism during plasma processing of 0.25 μm technology devices. International Symposium on IC Technology, Systems and Applications 8 : 156-158. ScholarBank@NUS Repository.||Abstract:||We report on the charge trapping mechanism as being the dominant degradation mode during plasma processing of 0.25μm technology devices. The results are supported by charge-pumping experiments and measurements of the threshold voltage after plasma processing and during the subsequent hot-carrier stressing under maximum substrate current conditions.||Source Title:||International Symposium on IC Technology, Systems and Applications||URI:||http://scholarbank.nus.edu.sg/handle/10635/72518|
|Appears in Collections:||Staff Publications|
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