Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/72518
Title: Charge trapping as the dominant degradation mechanism during plasma processing of 0.25 μm technology devices
Authors: Song, J.
Chim, W.K. 
Chan, D.S.H. 
Pan, Y.
Issue Date: 1999
Citation: Song, J.,Chim, W.K.,Chan, D.S.H.,Pan, Y. (1999). Charge trapping as the dominant degradation mechanism during plasma processing of 0.25 μm technology devices. International Symposium on IC Technology, Systems and Applications 8 : 156-158. ScholarBank@NUS Repository.
Abstract: We report on the charge trapping mechanism as being the dominant degradation mode during plasma processing of 0.25μm technology devices. The results are supported by charge-pumping experiments and measurements of the threshold voltage after plasma processing and during the subsequent hot-carrier stressing under maximum substrate current conditions.
Source Title: International Symposium on IC Technology, Systems and Applications
URI: http://scholarbank.nus.edu.sg/handle/10635/72518
Appears in Collections:Staff Publications

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