Full Name
Li Ming-Fu
(not current staff)
Variants
MINGFU, LI
Li, M.-F.
LI, MING FU
MINGFU LI N.
Mingfu, L.
Fu, L.M.
MINGFU LI
Li, M.F.
Li, Ming Fu
Li, M.
Li, M.-f.
 
 
 
Email
elelimf@nus.edu.sg
 

Refined By:
Author:  Kwong, D.-L.

Results 1-20 of 90 (Search time: 0.008 seconds).

Issue DateTitleAuthor(s)
12004A comparison study of high-density MIM capacitors with ALD HfO 2-Al 2O 3 laminated, sandwiched and stacked dielectricsDing, S.-J. ; Hu, H.; Zhu, C. ; Kim, S.J. ; Li, M.F. ; Cho, B.J. ; Chin, A.; Kwong, D.-L.
2Aug-2004A dual-metal gate integration process for CMOS with sub-1-nm EOT HfO2 by using HfN replacement gateRen, C.; Yu, H.Y. ; Kang, J.F.; Wang, X.P.; Ma, H.H.H. ; Yeo, Y.-C. ; Chan, D.S.H. ; Li, M.-F. ; Kwong, D.-L.
3Jan-2006A fast measurement technique of MOSFET Id-Vg characteristicsShen, C.; Li, M.-F. ; Wang, X.P.; Yeo, Y.-C. ; Kwong, D.-L.
4Feb-2003A high-density MIM capacitor (13 fF/μm2) using ALD HfO2 dielectricsYu, X.; Zhu, C. ; Hu, H.; Chin, A. ; Li, M.F. ; Cho, B.J. ; Kwong, D.-L.; Foo, P.D.; Yu, M.B.
52005A new gate dielectric HfLaO with metal gate work function tuning capability and superior NMOSFETs performanceWang, X.P.; Li, M.F. ; Chin, A. ; Zhu, C. ; Chi, R.; Yu, X.F.; Shen, C.; Du, A.Y.; Chan, D.S.H. ; Kwong, D.-L.
6Mar-2005A novel program-erasable high-k AlN-Si MIS capacitorLai, C.H.; Chin, A.; Hung, B.F.; Cheng, C.F.; Yoo, W.J. ; Li, M.F. ; Zhu, C. ; McAlister, S.P.; Kwong, D.-L.
72004A novel program-erasable high-κ AlN capacitor with memory functionChin, A. ; Lai, C.H.; Hung, B.F.; Cheng, C.F.; McAlister, S.P.; Zhu, C. ; Li, M.-F. ; Kwong, D.-L.
82004A novel surface passivation process for HfO 2 Ge MOSFETsWu, N.; Zhang, Q.; Zhu, C. ; Chan, D.S.H. ; Li, M.F. ; Balasubramanian, N.; Du, A.Y.; Chin, A.; Sin, J.K.O.; Kwong, D.-L.
9Sep-2004A TaN-HfO2-Ge pMOSFET with novel SiH4 surface passivationWu, N.; Zhang, Q.; Zhu, C. ; Chan, D.S.H. ; Du, A.; Balasubramanian, N.; Li, M.F. ; Chin, A.; Sin, J.K.O.; Kwong, D.-L.
102005Advanced MOSFETs using HfTaON/SiO2 gate dielectric and TaN metal gate with excellent performances for low standby power applicationYu, X.; Zhu, C. ; Yu, M.; Li, M.F. ; Chin, A.; Tung, C.H.; Gui, D.; Kwong, D.-L.
11Mar-2004Al 2O 3-Ge-On-Insulator n- and p-MOSFETs With Fully NiSi and NiGe Dual GatesYu, D.S.; Huang, C.H.; Chin, A.; Zhu, C. ; Li, M.F. ; Cho, B.J. ; Kwong, D.-L.
121-Nov-2004Alternative surface passivation on germanium for metal-oxide-semiconductor applications with high-k gate dielectricWu, N.; Zhang, Q.; Zhu, C. ; Chan, D.S.H. ; Li, M.F. ; Balasubramanian, N.; Chin, A.; Kwong, D.-L.
132003Analysis of Charge Trapping and Breakdown Mechanism in High-K Dielectrics with Metal Gate Electrode Using Carrier SeparationLoh, W.Y. ; Cho, B.C. ; Joo, M.S. ; Li, M.F. ; Chan, D.S.H. ; Mathew, S.; Kwong, D.-L.
142004Characteristics of sub-1 nm CVD HfO2 gate dielectrics with HfN electrodes for advanced CMOS applicationsKang, J.F.; Yu, H.Y. ; Ren, C.; Wang, X.P.; Li, M.-F. ; Chan, D.S.H. ; Liu, X.Y.; Han, R.Q.; Wang, Y.Y.; Kwong, D.-L.
15Dec-2004Charge trapping and breakdown mechanism in HfAlO/TaN gate stack analyzed using carrier separationLoh, W.-Y. ; Cho, B.J. ; Joo, M.S. ; Li, M.-F. ; Chan, D.S.H. ; Mathew, S.; Kwong, D.-L.
161-Mar-2003Dependence of chemical composition ratio on electrical properties of HfO2-Al2O3 gate dielectricJoo, M.S. ; Cho, B.J. ; Yeo, C.C.; Wu, N.; Yu, H. ; Zhu, C. ; Li, M.F. ; Kwong, D.-L.; Balasubramanian, N.
1710-May-2004Effect of surface NH 3 anneal on the physical and electrical properties of HfO 2 films on Ge substrateWu, N.; Zhang, Q.; Zhu, C. ; Yeo, C.C.; Whang, S.J. ; Chan, D.S.H. ; Li, M.F. ; Cho, B.J. ; Chin, A.; Kwong, D.-L.; Du, A.Y.; Tung, C.H.; Balasubramanian, N.
184-Oct-2004Electrical characteristics and suppressed boron penetration behavior of thermally stable HfTaO gate dielectrics with polycrystalline-silicon gateYu, X.; Zhu, C. ; Li, M.F. ; Chin, A.; Du, A.Y.; Wang, W.D.; Kwong, D.-L.
198-Jul-2002Energy gap and band alignment for (HfO2)x(Al 2O3)1-x on (100) SiYu, H.Y. ; Li, M.F. ; Cho, B.J. ; Yeo, C.C.; Joo, M.S. ; Kwong, D.-L.; Pan, J.S.; Ang, C.H.; Zheng, J.Z.; Ramanathan, S.
202004Engineering of voltage nonlinearity in high-K MIM capacitor for analog/mixed-signal ICsKim, S.J. ; Cho, B.J. ; Li, M.-F. ; Ding, S.-J. ; Yu, M.B.; Zhu, C. ; Chin, A.; Kwong, D.-L.