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|Title:||Advanced MOSFETs using HfTaON/SiO2 gate dielectric and TaN metal gate with excellent performances for low standby power application||Authors:||Yu, X.
|Issue Date:||2005||Citation:||Yu, X.,Zhu, C.,Yu, M.,Li, M.F.,Chin, A.,Tung, C.H.,Gui, D.,Kwong, D.-L. (2005). Advanced MOSFETs using HfTaON/SiO2 gate dielectric and TaN metal gate with excellent performances for low standby power application. Technical Digest - International Electron Devices Meeting, IEDM 2005 : 27-30. ScholarBank@NUS Repository.||Abstract:||In this work, a novel HfTaON/SiO2 gate dielectric with metal gate has been investigated for low standby power CMOS application. This gate stack exhibits excellent electrical performances, including low leakage current relative to Hf-silicates, good thermal stability, very low interface state density, superior electron and hole mobilities (100% and 96% of universal curves at 0.8 MV/cm), and excellent BTI characteristic. Therefore, the HfTaON/SiO 2 has a potential to replace current SiO2 and SiON as the gate dielectric for advanced low standby power application. © 2005 IEEE.||Source Title:||Technical Digest - International Electron Devices Meeting, IEDM||URI:||http://scholarbank.nus.edu.sg/handle/10635/83445||ISBN:||078039268X||ISSN:||01631918|
|Appears in Collections:||Staff Publications|
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