Advanced MOSFETs using HfTaON/SiO2 gate dielectric and TaN metal gate with excellent performances for low standby power application

Abstract

In this work, a novel HfTaON/SiO2 gate dielectric with metal gate has been investigated for low standby power CMOS application. This gate stack exhibits excellent electrical performances, including low leakage current relative to Hf-silicates, good thermal stability, very low interface state density, superior electron and hole mobilities (100% and 96% of universal curves at 0.8 MV/cm), and excellent BTI characteristic. Therefore, the HfTaON/SiO 2 has a potential to replace current SiO2 and SiON as the gate dielectric for advanced low standby power application. © 2005 IEEE.