Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/83445
Title: Advanced MOSFETs using HfTaON/SiO2 gate dielectric and TaN metal gate with excellent performances for low standby power application
Authors: Yu, X.
Zhu, C. 
Yu, M.
Li, M.F. 
Chin, A.
Tung, C.H.
Gui, D.
Kwong, D.-L.
Issue Date: 2005
Source: Yu, X.,Zhu, C.,Yu, M.,Li, M.F.,Chin, A.,Tung, C.H.,Gui, D.,Kwong, D.-L. (2005). Advanced MOSFETs using HfTaON/SiO2 gate dielectric and TaN metal gate with excellent performances for low standby power application. Technical Digest - International Electron Devices Meeting, IEDM 2005 : 27-30. ScholarBank@NUS Repository.
Abstract: In this work, a novel HfTaON/SiO2 gate dielectric with metal gate has been investigated for low standby power CMOS application. This gate stack exhibits excellent electrical performances, including low leakage current relative to Hf-silicates, good thermal stability, very low interface state density, superior electron and hole mobilities (100% and 96% of universal curves at 0.8 MV/cm), and excellent BTI characteristic. Therefore, the HfTaON/SiO 2 has a potential to replace current SiO2 and SiON as the gate dielectric for advanced low standby power application. © 2005 IEEE.
Source Title: Technical Digest - International Electron Devices Meeting, IEDM
URI: http://scholarbank.nus.edu.sg/handle/10635/83445
ISBN: 078039268X
ISSN: 01631918
Appears in Collections:Staff Publications

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