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Samudra,Ganesh S

rp00141

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Full Name
Samudra,Ganesh S
Variants
Samudra, G.G.
SAMUDRA, GANESH SHANKAR
Samudra', G.S.
Samudra, Ganesh S.
Samudra, Ganesh Shankar
Shankar Samudra, Ganesh
Samudra, G.S.
Samudra, Ganesh
Samudra, G.
 
Main Affiliation
 
Faculty
 
Email
eleshanr@nus.edu.sg
 

Publications

Refined By:
Date Issued:  [2000 TO 2009]

Results 61-80 of 200 (Search time: 0.004 seconds).

Issue DateTitleAuthor(s)
612005Fast and slow dynamic NBTI components in p-MOSFET with SiON dielectric and their impact on device life-time and circuit applicationYang, T.; Li, M.F. ; Shen, C.; Ang, C.H.; Zhu, C. ; Yeo, Y.C. ; Samudra, G. ; Rustagi, S.C.; Yu, M.B.; Kwong, D.L.
62Nov-2005Fast DNBTI components in p-MOSFET with SiON dielectricYang, T.; Shen, C.; Li, M.F. ; Ang, C.H.; Zhu, C.X. ; Yeo, Y.-C. ; Samudra, G. ; Rustagi, S.C.; Yu, M.B.; Kwong, D.-L.
632006Fast erasing and highly reliable MONOS type memory with HfO2 high-k trapping layer and SI3N4/SiO2 tunneling stackWang, Y.Q.; Gao, D.Y.; Hwang, W.S.; Shen, C.; Zhang, G.; Samudra, G. ; Yeo, Y.-C. ; Yoo, W.J.
642006Fast Vth instability in HfO2 gate dielectric MOSFETs and Its impact on digital circuitsShen, C.; Yang, T.; Li, M.-F. ; Samudra, G. ; Yeo, Y.-C. ; Zhu, C.X. ; Rustagi, S.C.; Yut, M.B.; Kwong, D.-L.
65Dec-2006Fast Vth instability in HfO2 gate dielectric MOSFETs and its impact on digital circuitsShen, C.; Yang, T.; Li, M.-F. ; Wang, X.; Foo, C.E.; Samudra, G.S. ; Yeo, Y.-C. ; Kwong, D.-L.
662005First principle study of Si and Ge band structure for UTB MOSFETs applicationsLow, T.; Feng, Y.P. ; Li, M.F. ; Samudra, G. ; Yeo, Y.C. ; Bai, P.; Chan, L.; Kwong, D.L.
6724-May-2004Formation of sige nanocrystals in HfO 2 using in situ chemical vapor deposition for memory applicationsGupta, R.; Yoo, W.J. ; Wang, Y.; Tan, Z.; Samudra, G. ; Lee, S. ; Chan, D.S.H. ; Loh, K.P. ; Bera, L.K.; Balasubramanian, N.; Kwong, D.-L.
682009Gate-all-around quantum-wire field-effect transistor with dopant segregation at metal-semiconductor-metal heterostuctureWong, H.-S.; Tan, L.-H.; Chan, L.; Lo, G.-Q.; Samudra, G. ; Yeo, Y.-C. 
692000Global optimization for digital MOS circuits performanceChen, H.M.; Samudra, G.S. ; Chan, D.S.H. ; Ibrahim, Y. 
702006High quality silicon-germanium-on-insulator wafers fabricated using cyclical thermal oxidation and annealingWang, G.H.; Toh, E.-H.; Foo, Y.-L.; Tung, C.-H.; Choy, S.-F.; Samudra, G. ; Yeo, Y.-C. 
712007Hot carrier reliability of strained N-MOSFET with lattice mismatched source/drain stressorsAng, K.-W.; Wan, C.; Chui, K.-J.; Tung, C.-H.; Balasubramanian, N.; Li, M.-F. ; Samudra, G. ; Yeo, Y.-C. 
72Nov-2007Hot-carrier effects in strained n-channel transistor with silicon-carbon (Si1-yCy) source/drain stressors and its orientation dependenceAng, K.-W.; Wan, C.; Balasubramanian, N.; Samudra, G.S. ; Yeo, Y.-C. 
73Dec-2006I-MOS transistor with an elevated silicon-germanium impact-ionization region for bandgap engineeringToh, E.-H.; Wang, G.H.; Chan, L.; Lo, G.-Q.; Samudra, G. ; Yeo, Y.-C. 
74Jun-2004Image formation by use of the geometrical theory of diffractionKhoh, A.; Samudra, G.S. ; Wu, Y. ; Milster, T.; Choi, B.
752007Impact ionization nanowire transistor with multiple-gates, silicon-germanium impact ionization region, and sub-5 mV/decade subtheshold swingToh, E.-H.; Wang, G.H.; Zhu, M. ; Shen, C.; Chan, L.; Lo, G.-Q.; Tung, C.-H.; Sylvester, D.; Heng, C.-H. ; Samudra, G. ; Yeo, Y.-C. 
762007Impact of interfacial dipole on effective work function of nickel fully silicided gate electrodes formed on rare-earth-based dielectric interlayersLim, A.E.-J.; Fang, W.-W.; Liu, F.; Lee, R.T.P. ; Samudra, G. ; Kwong, D.-L. ; Yeo, Y.-C. 
772004Impact of metal gate work function on nano CMOS device performanceHou, Y.T. ; Low, T.; Xu, B.; Li, M.-F. ; Samudra, G. ; Kwong, D.L.
78Jun-2008In situ surface passivation and CMOS-compatible palladium-germanium contacts for surface-channel gallium arsenide MOSFETsChin, H.-C.; Zhu, M. ; Tung, C.-H.; Samudra, G.S. ; Yeo, Y.-C. 
792008In-situ surface passivation and metal-gate/high-k dielectric stack formation for N-channel gallium arsenide metal-oxide-semiconductor field-effect transistorsChin, H.-C.; Zhu, M. ; Whang, S.-J. ; Tung, C.-H.; Samudra, G.S. ; Yeo, Y.-C. 
802007Incorporation of tin in boron doped silicon for reduced deactivation of boron during post-laser-anneal rapid thermal processingLiu, F.; Tan, K.-M.; Wang, X.; Low, D.K.Y.; Lai, D.M.Y.; Lim, P.C.; Samudra, G. ; Yeo, Y.-C.