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| Title: | Gate-all-around quantum-wire field-effect transistor with dopant segregation at metal-semiconductor-metal heterostucture | Authors: | Wong, H.-S. Tan, L.-H. Chan, L. Lo, G.-Q. Samudra, G. Yeo, Y.-C. |
Issue Date: | 2009 | Citation: | Wong, H.-S.,Tan, L.-H.,Chan, L.,Lo, G.-Q.,Samudra, G.,Yeo, Y.-C. (2009). Gate-all-around quantum-wire field-effect transistor with dopant segregation at metal-semiconductor-metal heterostucture. Digest of Technical Papers - Symposium on VLSI Technology : 92-93. ScholarBank@NUS Repository. | Abstract: | We report the first demonstration of Dopant-Segregated Metal-Semiconductor- Metal (DS-MSM) heterostructure on Gate-All-Around Si quantum wire field-effect transistor (QWFET), achieving low external resistance and possibly injection velocity enhancement. ION enhancement of 72% and 26% over conventional QWFETs are obtained for n- and p- DS-MSM QWFETs, respectively. Record high single Si QWFET ION, normalized by quantum wire diameter, of 4.03 mA/μm (n-DS-MSM QWFET) and 1.5 mA/μm (p-DS-MSM QWFET) are reported. In addition, larger ION values are observed for 〈100〉 as compared to 〈110〉 channel orientation DS-MSM QWFETs. | Source Title: | Digest of Technical Papers - Symposium on VLSI Technology | URI: | http://scholarbank.nus.edu.sg/handle/10635/83756 | ISBN: | 9784863480094 | ISSN: | 07431562 |
| Appears in Collections: | Staff Publications |
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