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Samudra,Ganesh S

rp00141

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Full Name
Samudra,Ganesh S
Variants
Samudra, G.G.
SAMUDRA, GANESH SHANKAR
Samudra', G.S.
Samudra, Ganesh S.
Samudra, Ganesh Shankar
Shankar Samudra, Ganesh
Samudra, G.S.
Samudra, Ganesh
Samudra, G.
 
Main Affiliation
 
Faculty
 
Email
eleshanr@nus.edu.sg
 

Publications

Refined By:
Date Issued:  [2000 TO 2009]

Results 141-160 of 200 (Search time: 0.005 seconds).

Issue DateTitleAuthor(s)
1412007Route to low parasitic resistance in MuGFETs with silicon-carbon source/drain: Integration of novel low barrier Ni(M)Si:C metal silicides and pulsed laser annealingLee, R.T.-P. ; Koh, A.T.-Y.; Liu, F.-Y.; Fang, W.-W.; Liow, T.-Y.; Tan, K.-M.; Lim, P.-C.; Lim, A.E.-J.; Zhu, M. ; Hoe, K.-M.; Tung, C.-H.; Lo, G.-Q.; Wang, X.; Low, D.K.-Y.; Samudra, G.S. ; Chi, D.-Z.; Yeo, Y.-C. 
142Mar-2005SDODEL MOSFET for performance enhancementChui, K.J.; Samudra, G.S. ; Yeo, Y.-C. ; Tee, K.-C.; Leong, K.-W.; Tee, K.M.; Benistant, F.; Chan, L.
1432008Selenium Co-implantation and segregation as a new contact technology for nanoscale SOI N-FETs featuring NiSi:C formed on Silicon-carbon (Si:C) source/drain stressorsWong, H.-S.; Liu, F.-Y.; Ang, K.-W.; Koh, S.-M.; Koh, A.T.-Y.; Liow, T.-Y.; Lee, R.T.-P. ; Lim, A.E.-J.; Fang, W.-W.; Zhu, M. ; Chan, L.; Balasubramaniam, N.; Samudra, G. ; Yeo, Y.-C. 
144Oct-2009Selenium segregation for lowering the contact resistance in ultrathin-body MOSFETs with fully metallized source/drainWong, H.-S.; Chan, L.; Samudra, G. ; Yeo, Y.-C. 
145Nov-2005Self-assembled tungsten nanocrystals in high- k dielectric for nonvolatile memory applicationSamanta, S.K. ; Tan, Z.Y.L.; Yoo, W.J. ; Samudra, G. ; Lee, S. ; Bera, L.K.; Balasubramanian, N.
1462009Self-consistent Schrödinger-Poisson simulations on capacitance-voltage characteristics of silicon nanowire gate-all-around MOS devices with experimental comparisonsChin, S.K.; Ligatchev, V.; Rustagi, S.C.; Zhao, H.; Samudra, G.S. ; Singh, N.; Lo, G.Q.; Kwong, D.-L.
1472009Self-consistent Schrödinger-Poisson simulations on capacitance-voltage characteristics of silicon nanowire gate-all-around MOS devices with experimental comparisonsChin, S.K.; Ligatchev, V.; Rustagi, S.C.; Zhao, H.; Samudra, G.S. ; Singh, N.; Lo, G.Q.; Kwong, D.-L.
148Apr-2005Self-consistent simulation of quantum dot flash memory device with SiO 2 and HfO 2 dielectricsChong, C.C.; Zhou, K.H.; Bai, P.; Li, Er.P.; Samudra, G.S. 
1492007Silicon nano-wire impact ionization transistors with multiple-gates for enhanced gate control and performanceToh, E.-H.; Wang, G.H.; Shen, C.; Zhu, M. ; Chan, L.; Heng, C.-H. ; Samudra, G. ; Yeo, Y.-C. 
1502009Silicon-carbon formed using cluster-carbon implant and laser-induced epitaxy for application as source/drain stressors in strained n-channel MOSFETsKoh, S.-M.; Wang, X.; Sekar, K.; Krull, W.; Samudra, G.S. ; Yeo, Y.-C. 
151May-2008Silicon-carbon stressors with high substitutional carbon concentration and in situ doping formed in source/drain extensions of n-channel transistorsWong, H.-S.; Ang, K.-W.; Chan, L.; Hoe, K.-M.; Tung, C.-H.; Balasubramanian, N.; Weeks, D.; Bauer, M.; Spear, J.; Thomas, S.G.; Samudra, G. ; Yeo, Y.-C. 
1522007Silicon-germanium-tin (SiGeSn) source and drain stressors formed by Sn implant and laser annealing for strained silicon-germanium channel P-MOSFETsWang, G.H.; Toh, E.-H.; Wang, X.; Seng, D.H.L.; Tripathy, S.; Osipowicz, T.; Chan, T.K.; Hoe, K.M.; Balakumar, S.; Tung, C.H.; Lo, G.-Q.; Samudra, G. ; Yeo, Y.-C. 
1532009Siliconr: Carbon source/drain stressors: Intégration of a novel nickel aluminide-silicide and post-solid-phase-epitaxy anneal for reduced schottky-barrier and leakageKoh, S.-M.; Zhou, W.J.; Lee, R.T.P. ; Sinha, M.; Ng, C.-M.; Zhao, Z.; Maynard, H.; Variam, N.; Erokhin, Y.; Samudra, G. ; Yeo, Y.-C. 
154Apr-2000Simple modelling of device speed in double-gate SOI MOSFETsRajendran, K. ; Samudra, G. 
1551-Jan-2008Simulation and design of a germanium L-shaped impact-ionization MOS transistorToh, E.-H.; Wang, G.H.; Chan, L.; Samudra, G. ; Yeo, Y.-C. 
1562007Simulation of multiple gate FinFET device gate capacitance and performance with gate length and pitch scalingZhao, H.; Agrawal, N.; Javier, R.; Rustagi, S.C.; Jurczak, M.; Yeo, Y.-C. ; Samudra, G.S. 
15710-May-2006Simulation of trapping properties of high κ material as the charge storage layer for flash memory applicationYeo, Y.N.; Wang, Y.Q.; Samanta, S.K. ; Yoo, W.J. ; Samudra, G. ; Gao, D.; Chong, C.C.
15810-May-2006Simulation of trapping properties of high κ material as the charge storage layer for flash memory applicationYeo, Y.N.; Wang, Y.Q.; Samanta, S.K. ; Yoo, W.J. ; Samudra, G. ; Gao, D.; Chong, C.C.
1592006Slanted oxide-bypassed superjunction power MOSFETsChen, Y.; Liang, Y.C. ; Samudra, G.S. 
160Jul-2008Source and drain series resistance reduction for N-channel transistors using solid antimony (Sb) segregation (SSbS) during silicidationWong, H.-S.; Koh, A.T.-Y.; Chin, H.-C.; Chan, L.; Samudra, G. ; Yeo, Y.-C.