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Samudra,Ganesh S

rp00141

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Full Name
Samudra,Ganesh S
Variants
Samudra, G.G.
SAMUDRA, GANESH SHANKAR
Samudra', G.S.
Samudra, Ganesh S.
Samudra, Ganesh Shankar
Shankar Samudra, Ganesh
Samudra, G.S.
Samudra, Ganesh
Samudra, G.
 
Main Affiliation
 
Faculty
 
Email
eleshanr@nus.edu.sg
 

Publications

Refined By:
Date Issued:  [2000 TO 2009]

Results 121-140 of 200 (Search time: 0.005 seconds).

Issue DateTitleAuthor(s)
121Mar-2002Parasitic capacitance characteristics of deep submicrometre grooved gate MOSFETsSreelal, S.; Lau, C.K.; Samudra, G.S. 
1222009Partial SOI superjunction power LDMOS for PIC applicationChen, Y.; Liang, Y.C. ; Samudra, G.S. ; Buddharaju, K.D.; Feng, H.
123Nov-2007Performance enhancement in uniaxial strained silicon-on-insulator N-MOSFETs featuring silicon-carbon source/drain regionsAng, K.-W.; Chui, K.-J.; Tung, C.-H.; Balasubramanian, N.; Samudra, G.S. ; Yeo, Y.-C. 
1242007Performance enhancement of n-channel impact-ionization metal-oxide- semiconductor transistor by strain engineeringToh, E.-H.; Wang, G.H.; Lo, G.-Q.; Chan, L.; Samudra, G. ; Yeo, Y.-C. 
1252008Performance enhancement schemes featuring lattice mismatched S/D stressors concurrently realized on CMOS platform: e-SiGeSn S/D for pFETs by Sn+ implant and SiC S/D for nFETs by C+ implantWang, G.H.; Toh, E.-H.; Wang, X.; Seng, D.H.L.; Tripathy, S.; Osipowicz, T. ; Tau, K.C.; Samudra, G. ; Yeo, Y.-C. 
1262004Pmodelling characteristics of silicon quantum dot flash memory with high-k dielectricsZhou, K.H.; Bai, P.; Chong, C.C.; Samudra, G.S. 
1272001Poly Flanked VDMOS (PFVDMOS): A superior technology for superjunction devicesGan, K.P.; Liang, Y.C. ; Samudra, G.S. ; Xu, S.M.; Yong, L.
1288-Feb-2005Power MOSFET having enhanced breakdown voltageLIANG, YUNG CHII ; SAMUDRA, GANESH SHANKAR ; GAN, KIAN PAAU; YANG, XIN 
129Aug-2004Practical superjuction MOSFET device performance under given process thermal cyclesZhong, H.; Liang, Y.C. ; Samudra, G.S. ; Yang, X.
1302007Probing the ErSi1.7 Phase formation by micro-Raman spectroscopyLee, R.T.-P. ; Tan, K.-M.; Liow, T.-Y.; Ho, C.-S.; Tripathy, S.; Samudra, G.S. ; Chi, D.-Z.; Yeo, Y.-C. 
13115-Aug-2006Process flow for a performance enhanced MOSFET with self-aligned, recessed channelSNEELAL, SNEEDHARAN PILLAI; POH, FRANCIS; LEE, JAMES; SEE, ALEX ; LAU, C. K. ; SAMUDRA, GANESH SHANKAR 
13221-May-2002Process flow for a performance enhanced MOSFET with self-aligned, recessed channelSNEELAL, SNEEDHARAN PILLAI; POH, FRANCIS YOUG WEE; LEE, JAMES YONG MENG; SEE, ALEX ; LAU, C. K. ; SAMUDRA, GANESH SHANKAR 
1332006Process-induced strained P-MOSFET featuring nickel-platinum silicided source/drainLee, R.T.P. ; Liow, T.-Y.; Tan, K.-M.; Ang, K.-W.; Chui, K.-J.; Guo, Q.-L.; Samudra, G. ; Chi, D.-Z.; Yeo, Y.-C. 
1342007Progression of superjunction power MOSFET devicesChen, Y.; Liang, Y.C. ; Samudra, G.S. ; Feng, H.
135Jan-2008Progressive development of superjunction power MOSFET devicesChen, Y.; Liang, Y.C. ; Samudra, G.S. ; Yang, X.; Buddharaju, K.D.; Feng, H.
1361-Feb-2008Pseudo-potential band structure calculation of InSb ultra-thin films and its application to assess the n-metal-oxide-semiconductor transistor performanceZhu, Z.G.; Low, T.; Li, M.F. ; Fan, W.J.; Bai, P.; Kwong, D.L.; Samudra, G. 
137May-2008Pulsed laser annealing of silicon-carbon source/drain in MuGFETs for enhanced dopant activation and high substitutional carbon concentrationKoh, A.T.-Y.; Lee, R.T.-P. ; Liu, F.-Y.; Liow, T.-Y.; Tan, K.M.; Wang, X.; Samudra, G.S. ; Balasubramanian, N.; Chi, D.-Z.; Yeo, Y.-C. 
1382007Realistic simulation of reverse characteristics of 4H-SIC power DiodeWei, G.; Liang, Y.C. ; Samudra, G.S. 
1392008Realization of silicon-germanium-tin (SiGeSn) source/ drain stressors by Sn implant and solid phase epitaxy for strain engineering in SiGe channel P-MOSFETsWang, G.H.; Toh, E.-H.; Chan, T.K.; Osipowicz, T.; Foo, Y.-L.; Tung, C.H.; Lo, G.-Q.; Samudra, G. ; Yeo, Y.-C. 
1402007Reduction of impact-ionization threshold energies for performance enhancement of complementary impact-ionization metal-oxide-semiconductor transistorsToh, E.-H.; Wang, G.H.; Chan, L.; Samudra, G. ; Yeo, Y.-C.