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|Title:||Process-induced strained P-MOSFET featuring nickel-platinum silicided source/drain||Authors:||Lee, R.T.P.
|Issue Date:||2006||Citation:||Lee, R.T.P.,Liow, T.-Y.,Tan, K.-M.,Ang, K.-W.,Chui, K.-J.,Guo, Q.-L.,Samudra, G.,Chi, D.-Z.,Yeo, Y.-C. (2006). Process-induced strained P-MOSFET featuring nickel-platinum silicided source/drain. Materials Research Society Symposium Proceedings 913 : 59-64. ScholarBank@NUS Repository.||Abstract:||We report the use of nickel-platinum suicide (NiPtSi) as a source/drain (S/D) material for strain engineering in P-MOSFETs to improve drive current performance. The material and electrical characteristics of NiPtSi with various Pt concentrations was investigated and compared with those of NiSi. Ni 0.95Pt0.05Si was selected for device integration. A 0.18 μm gate length P-MOSFET achieved a 22% gain in IDsat, when Ni 0.95Pt0.05Si S/D is employed instead of NiSi S/D. The enhancement is attributed to strain modification effects related to the nickel-platinum silicidation process. © 2006 Materials Research Society.||Source Title:||Materials Research Society Symposium Proceedings||URI:||http://scholarbank.nus.edu.sg/handle/10635/84113||ISBN:||1558998691||ISSN:||02729172|
|Appears in Collections:||Staff Publications|
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