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|Title:||Pmodelling characteristics of silicon quantum dot flash memory with high-k dielectrics||Authors:||Zhou, K.H.
|Issue Date:||2004||Citation:||Zhou, K.H.,Bai, P.,Chong, C.C.,Samudra, G.S. (2004). Pmodelling characteristics of silicon quantum dot flash memory with high-k dielectrics. 10th International Symposium on Integrated Circuits, Devices and Systems, ISIC-2004: Integrated Systems on Silicon - Proceedings : 37-40. ScholarBank@NUS Repository.||Abstract:||In this paper, we have conducted a theoretical study on the characteristics of the silicon quantum dot flash memory with high-k dielectrics. High-k dielectrics, HfO 2 and HfAlO, are considered and compared with SiO 2. Results show that, due to the high dielectric constant and low electron barrier height, the use of high-k dielectrics offers higher programming current at lower operation voltage and better retention time. It demonstrates that high-k dielectrics with advantages of faster programming/ erase speed and longer retention time are promising candidates for replacing conventional SiO 2 insulator.||Source Title:||10th International Symposium on Integrated Circuits, Devices and Systems, ISIC-2004: Integrated Systems on Silicon - Proceedings||URI:||http://scholarbank.nus.edu.sg/handle/10635/84103||ISBN:||9810517874|
|Appears in Collections:||Staff Publications|
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