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Samudra,Ganesh S

rp00141

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Full Name
Samudra,Ganesh S
Variants
Samudra, G.G.
SAMUDRA, GANESH SHANKAR
Samudra', G.S.
Samudra, Ganesh S.
Samudra, Ganesh Shankar
Shankar Samudra, Ganesh
Samudra, G.S.
Samudra, Ganesh
Samudra, G.
 
Main Affiliation
 
Faculty
 
Email
eleshanr@nus.edu.sg
 

Publications

Refined By:
Date Issued:  [2000 TO 2009]

Results 161-180 of 200 (Search time: 0.005 seconds).

Issue DateTitleAuthor(s)
1612005Source/drain germanium condensation for P-channel strained ultra-thin body transistorsChui, K.-J.; Ang, K.-W.; Madan, A.; Wang, H.; Tung, C.-H.; Wong, L.-Y.; Wang, Y.; Choy, S.-F.; Balasubramanian, N.; Li, M.F. ; Samudra, G. ; Yeo, Y.-C. 
1622007Source/drain-extension-last process for incorporating in situ doped lattice-mismatched extension stressor for enhanced performance in SOI N-FETWong, H.-S.; Ang, K.-W.; Chan, L.; Hoe, K.-M.; Tung, C.-H.; Balasubramaniam, N.; Weeks, D.; Landin, T.; Spear, J.; Thomas, S.G.; Samudra, G. ; Yeo, Y.-C. 
163Jan-2008Spacer removal technique for boosting strain in n-channel FinFETs with silicon-carbon source and drain stressorsLiow, T.-Y.; Tan, K.-M.; Lee, R.T.P. ; Zhu, M. ; Hoe, K.-M.; Samudra, G.S. ; Balasubramanian, N.; Yeo, Y.-C. 
164Dec-2009SPICE behavioral model of the tunneling field-effect transistor for circuit simulationHong, Y.; Yang, Y.; Yang, L.; Samudra, G. ; Heng, C.-H. ; Yeo, Y.-C. 
165Oct-2007Strain and materials engineering for the I-MOS transistor with an elevated impact-ionization regionToh, E.-H.; Wang, G.H.; Chan, L.; Lo, G.-Q.; Samudra, G. ; Yeo, Y.-C. 
1662008Strain enhancement in spacerless N-channel FinFETs with silicon-carbon source and drain stressorsLiow, T.-Y.; Tan, K.-M.; Lee, R.T.P. ; Zhu, M. ; Hoe, K.-M.; Samudra, G.S. ; Balasubramanian, N.; Yeo, Y.-C. 
1672008Strain optimization in ultrathin body transistors with silicon-germanium source and drain stressorsMadan, A.; Samudra, G. ; Yeo, Y.-C. 
16825-Apr-2008Strain relaxed high quality silicon-germanium-on-insulator substrates formed by pulsed laser irradiation technologyWang, G.H.; Toh, E.-H.; Wang, X.; Hoe, K.-M.; Tripathy, S.; Samudra, G.S. ; Yeo, Y.-C. 
1692005Strain-induced very low noise RF MOSFETs on flexible plastic substrateKao, H.L.; Chin, A. ; Hung, B.F.; Lai, J.M.; Lee, C.F.; Li, M.-F. ; Samudra, G.S. ; Zhu, C. ; Xia, Z.L.; Liu, X.Y.; Kang, J.F.
1702008Strained FinFETs with in-situ doped Si1-yCy source and drain stressors: Performance boost with lateral stressor encroachment and high substitutional carbon contentLiow, T.-Y.; Tan, K.-M.; Weeks, D.; Lee, R.T.P. ; Zhu, M. ; Hoe, K.-M.; Tung, C.-H.; Bauer, M.; Spear, J.; Thomas, S.G.; Samudra, G.S. ; Balasubramanian, N.; Yeo, Y.-C. 
1712008Strained n-channel FinFETs featuring in situ doped silicon-carbon (Si1-yCy) source and drain stressors with high carbon contentLiow, T.-Y.; Tan, K.-M.; Weeks, D.; Lee, R.T.P. ; Zhu, M. ; Hoe, K.-M.; Tung, C.-H.; Bauer, M.; Spear, J.; Thomas, S.G.; Samudra, G.S. ; Balasubramanian, N.; Yeo, Y.-C. 
1722006Strained N-channel FinFETs with 25 nm gate length and silicon-carbon source/drain regions for performance enhancementLiow, T.-Y.; Tan, K.-M.; Lee, R.T.P. ; Du, A.; Tung, C.-H.; Samudra, G.S. ; Yoo, W.-J. ; Balasubramanian, N.; Yeo, Y.-C. 
173Jul-2007Strained n-channel transistors with silicon source and drain regions and embedded silicon/germanium as strain-transfer structureAng, K.-W.; Tung, C.-H.; Balasubramanian, N.; Samudra, G.S. ; Yeo, Y.-C. 
174Mar-2008Strained n-MOSFET with embedded source/drain stressors and strain-transfer structure (STS) for enhanced transistor performanceAng, K.-W.; Lin, J.; Tung, C.-H.; Balasubramanian, N.; Samudra, G.S. ; Yeo, Y.-C. 
175Oct-2007Strained p-channel FinFETs with extended Π-shaped silicon-germanium source and drain stressorsTan, K.-M.; Liow, T.-Y.; Lee, R.T.P. ; Hoe, K.M.; Tung, C.-H.; Balasubramanian, N.; Samudra, G.S. ; Yeo, Y.-C. 
1762007Strained Si n-FET featuring compliant SiGe Stress Transfer Layer (STL) and Si0.98C0.02 source/drain stressors for performance enhancementWang, G.H.; Toh, E.-H.; Weeks, D.; Landin, T.; Spear, J.; Tung, C.H.; Thomas, S.G.; Samudra, G. ; Yeo, Y.-C. 
1772007Strained SiGeSn formed by Sn implant into SiGe and pulsed laser annealingWang, G.H.; Toh, E.-H.; Wang, X.; Tripathy, S.; Osipowicz, T. ; Chan, T.K. ; Hoe, K.-M.; Balakumar, S.; Lo, G.-Q.; Samudra, G. ; Yeo, Y.-C. 
17824-Apr-2007Strained silicon-germanium-on-insulator n-channel transistor with silicon source and drain regions for performance enhancementWang, G.H.; Toh, E.-H.; Tung, C.-H.; Du, A.; Lo, G.-Q.; Samudra, G. ; Yeo, Y.-C. 
179Jan-2008Strained silicon-germanium-on-insulator n-MOSFET with embedded silicon source-and-drain stressorsWang, G.H.; Toh, E.-H.; Du, A.; Lo, G.-Q.; Samudra, G. ; Yeo, Y.-C. 
1802006Strained silicon-germanium-on-insulator N-MOSFETs featuring lattice mismatched source/drain stressor and high-stress silicon nitride linerWang, G.H.; Toh, E.-H.; Toh; Hoe, K.M.; Tripathy, S.; Balakurnar, S.; Lo, G.-Q.; Samudra, G. ; Yeo, Y.-C.