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https://doi.org/10.1109/VTSA.2008.4530829
Title: | Strained FinFETs with in-situ doped Si1-yCy source and drain stressors: Performance boost with lateral stressor encroachment and high substitutional carbon content | Authors: | Liow, T.-Y. Tan, K.-M. Weeks, D. Lee, R.T.P. Zhu, M. Hoe, K.-M. Tung, C.-H. Bauer, M. Spear, J. Thomas, S.G. Samudra, G.S. Balasubramanian, N. Yeo, Y.-C. |
Issue Date: | 2008 | Citation: | Liow, T.-Y., Tan, K.-M., Weeks, D., Lee, R.T.P., Zhu, M., Hoe, K.-M., Tung, C.-H., Bauer, M., Spear, J., Thomas, S.G., Samudra, G.S., Balasubramanian, N., Yeo, Y.-C. (2008). Strained FinFETs with in-situ doped Si1-yCy source and drain stressors: Performance boost with lateral stressor encroachment and high substitutional carbon content. International Symposium on VLSI Technology, Systems, and Applications, Proceedings : 126-127. ScholarBank@NUS Repository. https://doi.org/10.1109/VTSA.2008.4530829 | Source Title: | International Symposium on VLSI Technology, Systems, and Applications, Proceedings | URI: | http://scholarbank.nus.edu.sg/handle/10635/84230 | ISBN: | 9781424416158 | DOI: | 10.1109/VTSA.2008.4530829 |
Appears in Collections: | Staff Publications |
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