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|Title:||Strained n-MOSFET with embedded source/drain stressors and strain-transfer structure (STS) for enhanced transistor performance||Authors:||Ang, K.-W.
|Keywords:||Lateral tensile strain
Strain-transfer structure (STS)
|Issue Date:||Mar-2008||Citation:||Ang, K.-W., Lin, J., Tung, C.-H., Balasubramanian, N., Samudra, G.S., Yeo, Y.-C. (2008-03). Strained n-MOSFET with embedded source/drain stressors and strain-transfer structure (STS) for enhanced transistor performance. IEEE Transactions on Electron Devices 55 (3) : 850-857. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2007.915053||Abstract:||A novel n-channel MOS transistor with a silicon-germanium (SiGe) heterostructure embedded beneath the channel and silicon-carbon source/ drain (Si:C S/D) stressors was demonstrated. The additional SiGe structure couples additional strain from the S/D stressors to the overlying Si channel, leading to enhanced strain effects in the channel region. We termed the SiGe region a strain-transfer structure due to its role in enhancing the transfer of strain from lattice-mismatched S/D stressors to the channel region. Numerical simulations were performed using the finite-element method to explain the strain-transfer mechanism. A significant drive current IDsat improvement of 40% was achieved over the unstrained control devices, which is predominantly due to the strain-induced mobility enhancement. In addition, the impact of scaling the device design parameters on transistor drive current performance was investigated. Guidelines on further performance optimization in such a new device structure are provided. © 2008 IEEE.||Source Title:||IEEE Transactions on Electron Devices||URI:||http://scholarbank.nus.edu.sg/handle/10635/83081||ISSN:||00189383||DOI:||10.1109/TED.2007.915053|
|Appears in Collections:||Staff Publications|
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