Please use this identifier to cite or link to this item:
https://doi.org/10.1109/TED.2008.928025
| Title: | Strained n-channel FinFETs featuring in situ doped silicon-carbon (Si1-yCy) source and drain stressors with high carbon content | Authors: | Liow, T.-Y. Tan, K.-M. Weeks, D. Lee, R.T.P. Zhu, M. Hoe, K.-M. Tung, C.-H. Bauer, M. Spear, J. Thomas, S.G. Samudra, G.S. Balasubramanian, N. Yeo, Y.-C. |
Keywords: | FinFET In situ doped Multiple-gate field-effect transistor (MuGFET) Silicon-carbon Strain Stress |
Issue Date: | 2008 | Citation: | Liow, T.-Y., Tan, K.-M., Weeks, D., Lee, R.T.P., Zhu, M., Hoe, K.-M., Tung, C.-H., Bauer, M., Spear, J., Thomas, S.G., Samudra, G.S., Balasubramanian, N., Yeo, Y.-C. (2008). Strained n-channel FinFETs featuring in situ doped silicon-carbon (Si1-yCy) source and drain stressors with high carbon content. IEEE Transactions on Electron Devices 55 (9) : 2475-2483. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2008.928025 | Abstract: | Phosphorus in situ doped Si1-yCy films (SiC:P) with substitutional carbon concentration of 1.7% and 2.1% were selectively grown in the source and drain regions of double-gate 〈110〉-oriented (110)-sidewall FinFETs to induce tensile strain in the silicon channel. In situ doping removes the need for a high-temperature spike anneal for source/drain (S/D) dopant activation and thus preserves the carbon substitutionality in the SiC:P films as grown. A strain-induced IDsat enhancement of ∼15% and ∼22% was obtained for n-channel FinFETs with 1.7% and 2.1% carbon incorporated in the S/D, respectively. © 2008 IEEE. | Source Title: | IEEE Transactions on Electron Devices | URI: | http://scholarbank.nus.edu.sg/handle/10635/83079 | ISSN: | 00189383 | DOI: | 10.1109/TED.2008.928025 |
| Appears in Collections: | Staff Publications |
Show full item record
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.