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|Title:||Strained n-channel FinFETs featuring in situ doped silicon-carbon (Si1-yCy) source and drain stressors with high carbon content||Authors:||Liow, T.-Y.
In situ doped
Multiple-gate field-effect transistor (MuGFET)
|Issue Date:||2008||Citation:||Liow, T.-Y., Tan, K.-M., Weeks, D., Lee, R.T.P., Zhu, M., Hoe, K.-M., Tung, C.-H., Bauer, M., Spear, J., Thomas, S.G., Samudra, G.S., Balasubramanian, N., Yeo, Y.-C. (2008). Strained n-channel FinFETs featuring in situ doped silicon-carbon (Si1-yCy) source and drain stressors with high carbon content. IEEE Transactions on Electron Devices 55 (9) : 2475-2483. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2008.928025||Abstract:||Phosphorus in situ doped Si1-yCy films (SiC:P) with substitutional carbon concentration of 1.7% and 2.1% were selectively grown in the source and drain regions of double-gate 〈110〉-oriented (110)-sidewall FinFETs to induce tensile strain in the silicon channel. In situ doping removes the need for a high-temperature spike anneal for source/drain (S/D) dopant activation and thus preserves the carbon substitutionality in the SiC:P films as grown. A strain-induced IDsat enhancement of ∼15% and ∼22% was obtained for n-channel FinFETs with 1.7% and 2.1% carbon incorporated in the S/D, respectively. © 2008 IEEE.||Source Title:||IEEE Transactions on Electron Devices||URI:||http://scholarbank.nus.edu.sg/handle/10635/83079||ISSN:||00189383||DOI:||10.1109/TED.2008.928025|
|Appears in Collections:||Staff Publications|
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