Strained n-channel FinFETs featuring in situ doped silicon-carbon (Si1-yCy) source and drain stressors with high carbon content

Abstract

Phosphorus in situ doped Si1-yCy films (SiC:P) with substitutional carbon concentration of 1.7% and 2.1% were selectively grown in the source and drain regions of double-gate 〈110〉-oriented (110)-sidewall FinFETs to induce tensile strain in the silicon channel. In situ doping removes the need for a high-temperature spike anneal for source/drain (S/D) dopant activation and thus preserves the carbon substitutionality in the SiC:P films as grown. A strain-induced IDsat enhancement of ∼15% and ∼22% was obtained for n-channel FinFETs with 1.7% and 2.1% carbon incorporated in the S/D, respectively. © 2008 IEEE.