Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2007.905406
Title: Strained p-channel FinFETs with extended Π-shaped silicon-germanium source and drain stressors
Authors: Tan, K.-M.
Liow, T.-Y.
Lee, R.T.P. 
Hoe, K.M.
Tung, C.-H.
Balasubramanian, N.
Samudra, G.S. 
Yeo, Y.-C. 
Keywords: Extended-II
FinFET
Multiple gate
SiGe
Source/drain stressors
Strain
Stress
Issue Date: Oct-2007
Citation: Tan, K.-M., Liow, T.-Y., Lee, R.T.P., Hoe, K.M., Tung, C.-H., Balasubramanian, N., Samudra, G.S., Yeo, Y.-C. (2007-10). Strained p-channel FinFETs with extended Π-shaped silicon-germanium source and drain stressors. IEEE Electron Device Letters 28 (10) : 905-908. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2007.905406
Abstract: Further enhancement of performance in a strained p-channel multiple-gate or fin field-effect transistor (FinFET) device is demonstrated by utilizing an extended-II-shaped SiGe source/drain (S/D) stressor compared to that utilizing only II-shaped SiGe S/D. With the usage of a longer hydrofluoric acid cleaning time prior to the selective-epitaxy-raised S/D growth, a recess in the buried oxide is formed. This recess allows the subsequent SiGe growth on the fin sidewalls of the S/D regions to extend into the recessed buried oxide to provide a larger compressive stress in the channel for enhanced electrical performance compared to a device with SiGe S/D stressor. Process simulation shows that longitudinal compressive stress in the channel region is higher in a FinFET with extended-II-SiGe S/D than that with II-SiGe S/D. An enhancement of 26% in the drive current was experimentally observed, demonstrating further boost in enhancement of strained p-channel FinFET with little additional cost using this novel process. © 2007 IEEE.
Source Title: IEEE Electron Device Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/57525
ISSN: 07413106
DOI: 10.1109/LED.2007.905406
Appears in Collections:Staff Publications

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