Strained N-channel FinFETs with 25 nm gate length and silicon-carbon source/drain regions for performance enhancement

Abstract

We report the demonstration of 25 nm gate length LG tri-gate FinFETs with Si0.99C0.01 source and drain (S/D) regions. The strain-induced mobility enhancement due to the Si0.99C 0.01 S/D leads to a drive current IDsat improvement of 20% at a fixed off-state current Ioff of 1×10-7 A/μm. With additional channel strain engineering, FinFETs incorporating Si0.99C0.01 S/D and a tensile-stress silicon nitride (SiN) capping etch-stop layer (ESL) achieve an IDsat enhancement of 56%. © 2006 IEEE.