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|Title:||Strained N-channel FinFETs with 25 nm gate length and silicon-carbon source/drain regions for performance enhancement|
|Source:||Liow, T.-Y.,Tan, K.-M.,Lee, R.T.P.,Du, A.,Tung, C.-H.,Samudra, G.S.,Yoo, W.-J.,Balasubramanian, N.,Yeo, Y.-C. (2006). Strained N-channel FinFETs with 25 nm gate length and silicon-carbon source/drain regions for performance enhancement. Digest of Technical Papers - Symposium on VLSI Technology : 56-57. ScholarBank@NUS Repository.|
|Abstract:||We report the demonstration of 25 nm gate length LG tri-gate FinFETs with Si0.99C0.01 source and drain (S/D) regions. The strain-induced mobility enhancement due to the Si0.99C 0.01 S/D leads to a drive current IDsat improvement of 20% at a fixed off-state current Ioff of 1×10-7 A/μm. With additional channel strain engineering, FinFETs incorporating Si0.99C0.01 S/D and a tensile-stress silicon nitride (SiN) capping etch-stop layer (ESL) achieve an IDsat enhancement of 56%. © 2006 IEEE.|
|Source Title:||Digest of Technical Papers - Symposium on VLSI Technology|
|Appears in Collections:||Staff Publications|
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