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|Title:||Strain-induced very low noise RF MOSFETs on flexible plastic substrate||Authors:||Kao, H.L.
|Issue Date:||2005||Citation:||Kao, H.L.,Chin, A.,Hung, B.F.,Lai, J.M.,Lee, C.F.,Li, M.-F.,Samudra, G.S.,Zhu, C.,Xia, Z.L.,Liu, X.Y.,Kang, J.F. (2005). Strain-induced very low noise RF MOSFETs on flexible plastic substrate. Digest of Technical Papers - Symposium on VLSI Technology 2005 : 160-161. ScholarBank@NUS Repository. https://doi.org/10.1109/.2005.1469251||Abstract:||Using microstrip line design to screen substrate resistance generated RF noise, very low 1. l dB min. noise figure (NFmin) and high 12 dB associate gain are measured at 10 GHz of 0.18 μm MOSFET on plastic without de-embedding. The die on plastic was thinned to 30μm that allows applying uniaxial strain to further lower the 10 GHz NFmin to only 0.92 dB and comparable well with the 0.13 μm and 90nm nodes MOSFETs.||Source Title:||Digest of Technical Papers - Symposium on VLSI Technology||URI:||http://scholarbank.nus.edu.sg/handle/10635/84236||ISSN:||07431562||DOI:||10.1109/.2005.1469251|
|Appears in Collections:||Staff Publications|
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