Please use this identifier to cite or link to this item: https://doi.org/10.1109/.2005.1469251
Title: Strain-induced very low noise RF MOSFETs on flexible plastic substrate
Authors: Kao, H.L.
Chin, A. 
Hung, B.F.
Lai, J.M.
Lee, C.F.
Li, M.-F. 
Samudra, G.S. 
Zhu, C. 
Xia, Z.L.
Liu, X.Y.
Kang, J.F.
Issue Date: 2005
Citation: Kao, H.L.,Chin, A.,Hung, B.F.,Lai, J.M.,Lee, C.F.,Li, M.-F.,Samudra, G.S.,Zhu, C.,Xia, Z.L.,Liu, X.Y.,Kang, J.F. (2005). Strain-induced very low noise RF MOSFETs on flexible plastic substrate. Digest of Technical Papers - Symposium on VLSI Technology 2005 : 160-161. ScholarBank@NUS Repository. https://doi.org/10.1109/.2005.1469251
Abstract: Using microstrip line design to screen substrate resistance generated RF noise, very low 1. l dB min. noise figure (NFmin) and high 12 dB associate gain are measured at 10 GHz of 0.18 μm MOSFET on plastic without de-embedding. The die on plastic was thinned to 30μm that allows applying uniaxial strain to further lower the 10 GHz NFmin to only 0.92 dB and comparable well with the 0.13 μm and 90nm nodes MOSFETs.
Source Title: Digest of Technical Papers - Symposium on VLSI Technology
URI: http://scholarbank.nus.edu.sg/handle/10635/84236
ISSN: 07431562
DOI: 10.1109/.2005.1469251
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