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Samudra,Ganesh S

rp00141

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Full Name
Samudra,Ganesh S
Variants
Samudra, G.G.
SAMUDRA, GANESH SHANKAR
Samudra', G.S.
Samudra, Ganesh S.
Samudra, Ganesh Shankar
Shankar Samudra, Ganesh
Samudra, G.S.
Samudra, Ganesh
Samudra, G.
 
Main Affiliation
 
Faculty
 
Email
eleshanr@nus.edu.sg
 

Publications

Refined By:
Date Issued:  [2000 TO 2009]

Results 81-100 of 200 (Search time: 0.005 seconds).

Issue DateTitleAuthor(s)
812007Interface barrier abruptness and work function requirements for scaling Schottky source-drain MOS transistorsAgrawal, N.; Chen, J. ; Hui, Z.; Yeo, Y.-C. ; Lee, S. ; Chan, D.S.H. ; Li, M.-F. ; Samudra, G.S. 
822007Interface dipole mechanism and NMOS Ni-FUSI gate work function engineering using rare-earth metal (RE)-based dielectric interlayersLim, A.E.-J.; Fang, W.-W.; Liu, F.; Lee, R.T.P. ; Samudra, G.S. ; Kwong, D.-L. ; Yeo, Y.-C. 
83Oct-2005Interface trap passivation effect in NBTI measurement for p-MOSFET with SiON gate dielectricYang, T.; Shen, C.; Li, M.F. ; Ang, C.H.; Zhu, C.X. ; Yeo, Y.-C. ; Samudra, G. ; Kwong, D.-L.
842003Investigation of Performance Limits of Germanium Double-Gated MOSFETsLow, T.; Hou, Y.T. ; Li, M.F. ; Zhu, C. ; Chin, A.; Samudra, G. ; Chan, L.; Kwong, D.-L.
8528-Feb-2005Lattice strain analysis of transistor structures with silicon-germanium and silicon-carbon sourcedrain stressorsAng, K.-W.; Chui, K.-J.; Bliznetsov, V.; Tung, C.-H.; Du, A.; Balasubramanian, N.; Samudra, G. ; Li, M.F. ; Yeo, Y.-C. 
862005Long retention and low voltage operation using IrO2/HfAlO/HfSiO/ HfAlO gate stack for memory applicationWang, Y.Q.; Singh, P.K.; Yoo, W.J. ; Yeo, Y.C. ; Samudra, G. ; Chin, A.; Hwang, W.S.; Chen, J.H. ; Wang, S.J.; Kwong, D.-L.
87Jul-2005Low noise RF MOSFETs on flexible plastic substratesKao, H.L.; Chin, A. ; Hung, B.F.; Lee, C.F.; Lai, J.M.; McAlister, S.P.; Samudra, G.S. ; Yoo, W.J. ; Chi, C.C.
882008Low Schottky barrier height for silicides on n -type Si (100) by interfacial selenium segregation during silicidationWong, H.-S.; Chan, L.; Samudra, G. ; Yeo, Y.-C. 
892005Low voltage high speed SiO2/AlGaN/AlLaO3/TaN memory with good retentionChin, A. ; Laio, C.C.; Chen, C.; Chiang, K.C.; Yu, D.S.; Yoo, W.J. ; Samudra, G.S. ; Wang, T.; Hsieh, I.J.; McAlister, S.P.; Chi, C.C.
902007Material and electrical characterization of nickel silicide-carbon as contact metal to silicon-carbon source and drain stressorsLee, R.T.P. ; Yang, L.-T.; Ang, K.-W.; Liow, T.-Y.; Tan, K.-M.; Wong, A.S.-W.; Samudra, G.S. ; Chi, D.-Z.; Yeo, Y.-C. 
912007Metal-gate work function modulation using hafnium alloys obtained by the interdiffusion of thin metallic layersLim, A.E.-J.; Hwang, W.S.; Wang, X.P.; Lai, D.M.Y.; Samudra, G.S. ; Kwong, D.-L.; Yeo, Y.-C. 
922009Modeling of stress-retarded orientation-dependent oxidation: Shape engineering of silicon nanowire channelsMa, F.-J. ; Rustagi, S.C.; Zhao, H.; Samudra, G.S. ; Singh, N.; Budhaaraju, K.D.; Lo, G.Q.; Kwong, D.L.
932006Modeling study of InSb thin film for advanced III-V MOSFET applicationsZhu, Z.G.; Low, T.; Li, M.F. ; Fan, W.J.; Bai, P.; Kwong, D.L.; Samudra, G. 
94Nov-2005Modeling study of the impact of surface roughness on silicon and germanium UTB MOSFETsLow, T.; Li, M.-F. ; Samudra, G. ; Yeo, Y.-C. ; Zhu, C. ; Chin, A. ; Kwong, D.-L.
952000Modelling of the "Gated-diode" configuration in bulk MOSFET'sYip, A.; Yeow, Y.T.; Samudra, G.S. ; Ling, C.H. 
962000Modelling of the "Gated-diode" configuration in bulk MOSFET'sYip, A.; Yeow, Y.T.; Samudra, G.S. ; Ling, C.H. 
97Feb-2000Modelling of transconductance-to-current ratio (gm/ID) analysis on double-gate SOI MOSFETsRajendran, K. ; Samudra, G.S. 
982005Modelling, analysis and design of cascaded forward and interleaved converter for powering future microprocessorsSingh, R.P.; Khambadkone, A.M. ; Samudra, G.S. ; Liang, Y.C. 
99Aug-2008Modification of molybdenum gate electrode work function via (La-, Al-Induced) dipole effect at High-κ/SiO2 interfaceLim, A.E.-J.; Lee, R.T.P. ; Samudra, G.S. ; Kwong, D.-L.; Yeo, Y.-C. 
1002001MOS-controlled smart power synchronous rectifierLiang, Y.C. ; Lim, C.-Y.; Samudra, G.S.