Please use this identifier to cite or link to this item:
https://doi.org/10.1109/IEDM.2006.346736
Title: | Modeling study of InSb thin film for advanced III-V MOSFET applications | Authors: | Zhu, Z.G. Low, T. Li, M.F. Fan, W.J. Bai, P. Kwong, D.L. Samudra, G. |
Issue Date: | 2006 | Citation: | Zhu, Z.G.,Low, T.,Li, M.F.,Fan, W.J.,Bai, P.,Kwong, D.L.,Samudra, G. (2006). Modeling study of InSb thin film for advanced III-V MOSFET applications. Technical Digest - International Electron Devices Meeting, IEDM : -. ScholarBank@NUS Repository. https://doi.org/10.1109/IEDM.2006.346736 | Abstract: | Band structure of III-V material InSb thin films is calculated using empirical pseudopotential method (EPM). Contrary to the predictions by simple effective mass methods, our calculation predicts that the Γ valley (with the smallest isotropic bulk effective mass) in InSb remains the lowest lying conduction valley despite size quantization effects in the presence of competing L and Δ valleys which have larger quantization mass. Based on EPM, we computed the important electronic parameters (effective mass, valley minima) of InSb thin film as a function of film thicknesses. Our calculations reveal that the 'effective mass ' of Γ valley electrons increases with the scaling down of film thickness. We then studied the transport of InSb thin film using Non-Equilibrium Green's Function. The calculation reveals that InSb is comparable but not superior to Si as channel material of ultra-thin body double gate n-MOSFET in the ballistic limit of these devices. | Source Title: | Technical Digest - International Electron Devices Meeting, IEDM | URI: | http://scholarbank.nus.edu.sg/handle/10635/70998 | ISBN: | 1424404398 | ISSN: | 01631918 | DOI: | 10.1109/IEDM.2006.346736 |
Appears in Collections: | Staff Publications |
Show full item record
Files in This Item:
There are no files associated with this item.
SCOPUSTM
Citations
1
checked on Feb 1, 2023
Page view(s)
112
checked on Feb 2, 2023
Google ScholarTM
Check
Altmetric
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.