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Ma, F.-J.

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Full Name
Ma, F.-J.
Variants
Fajun, M.
Ma, F.
Ma, Fajun
Ma, F.-J.
 
Faculty
 
Email
SERMF@nus.edu.sg
 

Publications

Results 1-19 of 19 (Search time: 0.013 seconds).

Issue DateTitleAuthor(s)
12015Accurate extraction of the series resistance of aluminum local back surface field silicon wafer solar cellsChen, Jia; Du, Zheren ; Ma, Fajun ; Lin, Fen ; Sarangi, Debajyoti ; Hoex, Bram ; Aberle, Armin Gerhard 
21-Sep-2012Advanced modeling of the effective minority carrier lifetime of passivated crystalline silicon wafersMa, F.-J. ; Samudra, G.G. ; Peters, M.; Aberle, A.G. ; Werner, F.; Schmidt, J.; Hoex, B. 
32013Advanced solar cell modellingPeters, M.; Fajun, M. ; Cangming, K.; Siyu, G.; Sahraei, N.; Hoex, B. ; Aberle, A.G. 
42009Characterization and modeling of subfemtofarad nanowire capacitance using the CBCM techniqueZhao, H.; Kim, R.; Paul, A.; Luisier, M.; Klimeck, G.; Ma, F.-J. ; Rustagi, S.C.; Samudra, G.S. ; Singh, N.; Lo, G.-Q.; Kwong, D.-L.
52009Charge-based capacitance measurement technique for nanoscale devices: Accuracy assessment based on TCAD simulationsZhao, H.; Rustagi, S.C.; Ma, F.-J. ; Samudra, G.S. ; Singh, N.; Lo, G.Q.; Kwong, D.-L.
67-Sep-2013Deposition temperature independent excellent passivation of highly boron doped silicon emitters by thermal atomic layer deposited Al2O 3Liao, B.; Stangl, R.; Ma, F. ; Hameiri, Z.; Mueller, T.; Chi, D.; Aberle, A.G. ; Bhatia, C.S. ; Hoex, B. 
725-Sep-2013Excellent c-Si surface passivation by thermal atomic layer deposited aluminum oxide after industrial firing activationLiao, B.; Stangl, R.; Ma, F. ; Mueller, T.; Lin, F. ; Aberle, A.G. ; Bhatia, C.S. ; Hoex, B. 
82014Excellent surface passivation of heavily doped p+ silicon by low-temperature plasma-deposited SiOx/SiNy dielectric stacks with optimised antireflective performance for solar cell applicationDuttagupta, S.; Ma, F.-J. ; Hoex, B. ; Aberle, A.G. 
92009Modeling of stress-retarded orientation-dependent oxidation: Shape engineering of silicon nanowire channelsMa, F.-J. ; Rustagi, S.C.; Zhao, H.; Samudra, G.S. ; Singh, N.; Budhaaraju, K.D.; Lo, G.Q.; Kwong, D.L.
10Jul-2010Modeling of stress-retarded thermal oxidation of nonplanar silicon structures for realization of nanoscale devicesMa, F.-J. ; Rustagi, S.C.; Samudra, G.S. ; Zhao, H.; Singh, N.; Lo, G.-Q.; Kwong, D.-L.
112012Modelling and simulation of field-effect surface passivation of crystalline silicon-based solar cellsMa, F.-J. ; Hoex, B. ; Samudra, G.S. ; Aberle, A.G. 
122013Numerical analysis of p+ emitters passivated by a PECVD AlO x/SiNx stackMa, F.-J. ; Duttagupta, S.; Peters, M.; Samudra, G.S. ; Aberle, A.G. ; Hoex, B.
132012Optimised antireflection coatings using silicon nitride on textured silicon surfaces based on measurements and multidimensional modellingDuttagupta, S.; Ma, F. ; Hoex, B. ; Mueller, T.; Aberle, A.G. 
142013Progress in surface passivation of heavily doped n-type and p-type silicon by plasma-deposited AlO x/SiNx dielectric stacksDuttagupta, S.; Ma, F.-J. ; Lin, S.F.; Mueller, T.; Aberle, A.G. ; Hoex, B. 
152012State-of-the-art surface passivation of boron emitters using inline PECVD AlOx/SiNx stacks for industrial high-efficiency silicon wafer solar cellsDuttagupta, S.; Lin, F. ; Shetty, K.D.; Wilson, M.; Ma, F.-J. ; Lin, J. ; Aberle, A.G. ; Hoex, B. 
162010Study on SiGe nanowire shape engineering and Ge condensationMa, F.-J. ; Chia, B.S.; Rustagi, S.C.; Samudr, G.C.
172008Sub-femto-farad capacitance-voltage characteristics of single channel gate-all-around nano wire transistors for electrical characterization of carrier transportZhao, H.; Rustagi, S.C.; Singh, N.; Ma, F.-J. ; Samudra, G.S. ; Budhaaraju, K.D.; Manhas, S.K.; Tung, C.H.; Lo, G.Q.; Baccarani, G.; Kwong, D.L.
182015The impact of surface damage region and edge recombination on the effective lifetime of silicon wafers at low illumination conditionsHameiri Z.; Ma, F.-J. 
192015Three-dimensional numerical analysis of hybrid heterojunction silicon wafer solar cells with heterojunction rear point contactsLing Z.P. ; Duttagupta S. ; Ma F. ; Mueller T. ; Aberle A.G. ; Stangl R.