Please use this identifier to cite or link to this item:
|Title:||Excellent surface passivation of heavily doped p+ silicon by low-temperature plasma-deposited SiOx/SiNy dielectric stacks with optimised antireflective performance for solar cell application||Authors:||Duttagupta, S.
|Keywords:||Boron doped p+ emitters
Plasma-enhanced chemical vapor deposition
Silicon oxide/Silicon nitride dielectric stacks
|Issue Date:||2014||Citation:||Duttagupta, S., Ma, F.-J., Hoex, B., Aberle, A.G. (2014). Excellent surface passivation of heavily doped p+ silicon by low-temperature plasma-deposited SiOx/SiNy dielectric stacks with optimised antireflective performance for solar cell application. Solar Energy Materials and Solar Cells 120 (PART A) : 204-208. ScholarBank@NUS Repository. https://doi.org/10.1016/j.solmat.2013.09.004||Abstract:||The passivation of p+ Si surfaces is challenging due to the fact that most passivation films have an intrinsically high positive fixed charge. In this work we show experimentally that low-temperature plasma-enhanced chemical vapor deposited SiOx/SiNy stacks with a low positive fixed charge density (+1011 cm-2) and very low interface defect density (~3×1010 eV-1 cm -2) as measured by contactless corona-voltage measurements can effectively passivate p+ surfaces resulting in emitter saturation current density (J0e) values of 25 and 45 fA/cm2 on planar and textured 75 /sq p+ silicon after industrial firing with a set-temperature of ~800 C, respectively. Based on contactless corona-voltage measurements and advanced device simulations, we explain the mechanism of surface passivation by PECVD SiOx/SiNy dielectric stack to be completely dominated by chemical passivation rather than field-effect passivation. Furthermore, from advanced device simulations we illustrate the role of fixed charge in surface passivation and in the extraction of fundamental surface recombination velocity parameter for p+ silicon surfaces. The fundamental surface recombination velocity parameter for electrons is determined to be about 400 cm/s at these c-Si/SiOx interfaces. With excellent optical and passivation properties, SiOx/SiNy dielectric stacks are suitable for high-efficiency and cost-effective industrial n-type silicon wafer solar cells. © 2013 Elsevier B.V.||Source Title:||Solar Energy Materials and Solar Cells||URI:||http://scholarbank.nus.edu.sg/handle/10635/82313||ISSN:||09270248||DOI:||10.1016/j.solmat.2013.09.004|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Feb 17, 2020
WEB OF SCIENCETM
checked on Feb 10, 2020
checked on Feb 17, 2020
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.