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|Title:||Modeling of stress-retarded orientation-dependent oxidation: Shape engineering of silicon nanowire channels||Authors:||Ma, F.-J.
|Issue Date:||2009||Citation:||Ma, F.-J.,Rustagi, S.C.,Zhao, H.,Samudra, G.S.,Singh, N.,Budhaaraju, K.D.,Lo, G.Q.,Kwong, D.L. (2009). Modeling of stress-retarded orientation-dependent oxidation: Shape engineering of silicon nanowire channels. Technical Digest - International Electron Devices Meeting, IEDM : 21.5.1-21.5.4. ScholarBank@NUS Repository. https://doi.org/10.1109/IEDM.2009.5424306||Abstract:||A new universal stress retardation parameter set is successful to account for initial oxidation rate enhancement, orientation-dependent retardation and self-limiting phenomena observed in the dry oxidation experiment of the silicon FIN nanostructures over a wide temperature range. This stressretarded orientation-dependent model was proved to be trustworthy in shape engineering of silicon nanowire channels. © 2009 IEEE.||Source Title:||Technical Digest - International Electron Devices Meeting, IEDM||URI:||http://scholarbank.nus.edu.sg/handle/10635/70997||ISBN:||9781424456406||ISSN:||01631918||DOI:||10.1109/IEDM.2009.5424306|
|Appears in Collections:||Staff Publications|
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