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https://doi.org/10.1109/JPHOTOV.2013.2270350
Title: | Progress in surface passivation of heavily doped n-type and p-type silicon by plasma-deposited AlO x/SiNx dielectric stacks | Authors: | Duttagupta, S. Ma, F.-J. Lin, S.F. Mueller, T. Aberle, A.G. Hoex, B. |
Keywords: | Aluminum oxide/silicon nitride (AlOx/SiN x) stacks boron-doped emitters crystalline silicon phosphorus-doped emitters plasma-enhanced chemical vapor deposition (PECVD) surface passivation |
Issue Date: | 2013 | Citation: | Duttagupta, S., Ma, F.-J., Lin, S.F., Mueller, T., Aberle, A.G., Hoex, B. (2013). Progress in surface passivation of heavily doped n-type and p-type silicon by plasma-deposited AlO x/SiNx dielectric stacks. IEEE Journal of Photovoltaics 3 (4) : 1163-1169. ScholarBank@NUS Repository. https://doi.org/10.1109/JPHOTOV.2013.2270350 | Abstract: | We report an outstanding level of surface passivation for both n + and p+ silicon by AlO x/SiNx dielectric stacks deposited in an inline plasma-enhanced chemical vapor deposition (PECVD) reactor for a wide range of sheet resistances. Extremely low emitter saturation current densities (J-{0e}) of 12 and 200 fA/cm2 are obtained on 165 and 25 Ω/sq n+ emitters, respectively, and 8 and 45 fA/cm2 on 170 and 30 Ω/sq p + emitters, respectively. Using contactless corona-voltage measurements and device simulations, we demonstrate that the surface passivation mechanism on both n+ and p+ silicon is primarily due to a relatively low interface defect density of | Source Title: | IEEE Journal of Photovoltaics | URI: | http://scholarbank.nus.edu.sg/handle/10635/82937 | ISSN: | 21563381 | DOI: | 10.1109/JPHOTOV.2013.2270350 |
Appears in Collections: | Staff Publications |
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