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|Title:||Study on SiGe nanowire shape engineering and Ge condensation||Authors:||Ma, F.-J.
|Issue Date:||2010||Citation:||Ma, F.-J.,Chia, B.S.,Rustagi, S.C.,Samudr, G.C. (2010). Study on SiGe nanowire shape engineering and Ge condensation. 2010 International Conference on Enabling Science and Nanotechnology, ESciNano 2010 - Proceedings : -. ScholarBank@NUS Repository. https://doi.org/10.1109/ESCINANO.2010.5701078||Abstract:||Accurate modeling of stress-retarded orientation-dependent 2D oxidation is carried out by matching experimental and simulated oxide thickness of silicon FIN nanostructures over a wide range of temperature and time in dry oxygen. The new model is used to study shape engineering and Ge condensation in SiGe nanowire formation. ©2010 IEEE.||Source Title:||2010 International Conference on Enabling Science and Nanotechnology, ESciNano 2010 - Proceedings||URI:||http://scholarbank.nus.edu.sg/handle/10635/117276||ISBN:||9781424488544||DOI:||10.1109/ESCINANO.2010.5701078|
|Appears in Collections:||Staff Publications|
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