Please use this identifier to cite or link to this item: https://doi.org/10.1109/ESCINANO.2010.5701078
Title: Study on SiGe nanowire shape engineering and Ge condensation
Authors: Ma, F.-J. 
Chia, B.S.
Rustagi, S.C.
Samudr, G.C.
Issue Date: 2010
Citation: Ma, F.-J.,Chia, B.S.,Rustagi, S.C.,Samudr, G.C. (2010). Study on SiGe nanowire shape engineering and Ge condensation. 2010 International Conference on Enabling Science and Nanotechnology, ESciNano 2010 - Proceedings : -. ScholarBank@NUS Repository. https://doi.org/10.1109/ESCINANO.2010.5701078
Abstract: Accurate modeling of stress-retarded orientation-dependent 2D oxidation is carried out by matching experimental and simulated oxide thickness of silicon FIN nanostructures over a wide range of temperature and time in dry oxygen. The new model is used to study shape engineering and Ge condensation in SiGe nanowire formation. ©2010 IEEE.
Source Title: 2010 International Conference on Enabling Science and Nanotechnology, ESciNano 2010 - Proceedings
URI: http://scholarbank.nus.edu.sg/handle/10635/117276
ISBN: 9781424488544
DOI: 10.1109/ESCINANO.2010.5701078
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