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|Title:||Charge-based capacitance measurement technique for nanoscale devices: Accuracy assessment based on TCAD simulations||Authors:||Zhao, H.
|Keywords:||Charge-based capacitance measurement (CBCM) technique
Sub-femtofarad capacitance measurements
Transient TCAD simulations
|Issue Date:||2009||Citation:||Zhao, H., Rustagi, S.C., Ma, F.-J., Samudra, G.S., Singh, N., Lo, G.Q., Kwong, D.-L. (2009). Charge-based capacitance measurement technique for nanoscale devices: Accuracy assessment based on TCAD simulations. IEEE Transactions on Electron Devices 56 (5) : 1157-1160. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2009.2016396||Abstract:||In this brief, we carried out extensive mixed device and circuit-mode simulations to calibrate the charge-based capacitance measurement technique specifically for subfemtofarad nanowire-based device capacitance. The factors that influence the accuracy of the technique were identified. © 2009 IEEE.||Source Title:||IEEE Transactions on Electron Devices||URI:||http://scholarbank.nus.edu.sg/handle/10635/55287||ISSN:||00189383||DOI:||10.1109/TED.2009.2016396|
|Appears in Collections:||Staff Publications|
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