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|Title:||Deposition temperature independent excellent passivation of highly boron doped silicon emitters by thermal atomic layer deposited Al2O 3||Authors:||Liao, B.
|Issue Date:||7-Sep-2013||Citation:||Liao, B., Stangl, R., Ma, F., Hameiri, Z., Mueller, T., Chi, D., Aberle, A.G., Bhatia, C.S., Hoex, B. (2013-09-07). Deposition temperature independent excellent passivation of highly boron doped silicon emitters by thermal atomic layer deposited Al2O 3. Journal of Applied Physics 114 (9) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4819970||Abstract:||In this work, we demonstrate that by using H2O based thermal atomic layer deposited (ALD) Al2O3 films, excellent passivation (emitter saturation current density of ∼28 fA/cm2) on industrial highly boron p+-doped silicon emitters (sheet resistance of ∼62 O/sq) can be achieved. The surface passivation of the Al 2O3 film is activated by a fast industrial high-temperature firing step identical to the one used for screen printed contact formation. Deposition temperatures in the range of 100-300 °C and peak firing temperatures of ∼800 °C (set temperature) are investigated, using commercial-grade 5″ Cz silicon wafers (∼5 O cm n-type). It is found that the level of surface passivation after activation is excellent for the whole investigated deposition temperature range. These results are explained by advanced computer simulations indicating that the obtained emitter saturation current densities are quite close to their intrinsic limit value where the emitter saturation current is solely ruled by Auger recombination. The process developed is industrially relevant and robust. © 2013 AIP Publishing LLC.||Source Title:||Journal of Applied Physics||URI:||http://scholarbank.nus.edu.sg/handle/10635/82123||ISSN:||00218979||DOI:||10.1063/1.4819970|
|Appears in Collections:||Staff Publications|
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