Please use this identifier to cite or link to this item:
|Title:||Sub-femto-farad capacitance-voltage characteristics of single channel gate-all-around nano wire transistors for electrical characterization of carrier transport||Authors:||Zhao, H.
|Issue Date:||2008||Citation:||Zhao, H.,Rustagi, S.C.,Singh, N.,Ma, F.-J.,Samudra, G.S.,Budhaaraju, K.D.,Manhas, S.K.,Tung, C.H.,Lo, G.Q.,Baccarani, G.,Kwong, D.L. (2008). Sub-femto-farad capacitance-voltage characteristics of single channel gate-all-around nano wire transistors for electrical characterization of carrier transport. Technical Digest - International Electron Devices Meeting, IEDM : -. ScholarBank@NUS Repository. https://doi.org/10.1109/IEDM.2008.4796810||Abstract:||In this work the charge-based capacitance measurement (CBCM) method has been extended and calibrated to measure sub-fF level bias-dependent capacitance of single channel silicon nanowire (SNW) transistors. Mixed mode simulations are used to establish the efficacy of the method. Test keys have been carefully designed and fabricated on-chip so that C-V and I-V characteristics are measured on the same single finger SNW device. To our knowledge, this is the first work to report systematic extraction of the mobility of channel carriers from a single channel SNW device at room temperature.||Source Title:||Technical Digest - International Electron Devices Meeting, IEDM||URI:||http://scholarbank.nus.edu.sg/handle/10635/71895||ISBN:||9781424423781||ISSN:||01631918||DOI:||10.1109/IEDM.2008.4796810|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Apr 21, 2019
checked on Apr 26, 2019
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.