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|Title:||Low noise RF MOSFETs on flexible plastic substrates||Authors:||Kao, H.L.
|Issue Date:||Jul-2005||Citation:||Kao, H.L., Chin, A., Hung, B.F., Lee, C.F., Lai, J.M., McAlister, S.P., Samudra, G.S., Yoo, W.J., Chi, C.C. (2005-07). Low noise RF MOSFETs on flexible plastic substrates. IEEE Electron Device Letters 26 (7) : 489-491. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2005.851238||Abstract:||We report a low minimum noise figure (NFmin) of 1.1 dB and high associated gain (12 dB at 10 GHz) for 16 gate-finger 0.18-μm RF MOSFETs, after thinning down the Si substrate to 30 μm and mounting it on plastic. The device performance was improved by flexing the substrate to create stress, which produced a 25% enhancement of the saturation drain current and lowered NFmin to 0.92 dB at 10 GHz. These excellent results for mechanically strained RF MOSFETs on plastic compare well with 0.13-μm node (Lg = 80 nm) devices. © 2005 IEEE.||Source Title:||IEEE Electron Device Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/82626||ISSN:||07413106||DOI:||10.1109/LED.2005.851238|
|Appears in Collections:||Staff Publications|
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