Please use this identifier to cite or link to this item:
|Title:||Realistic simulation of reverse characteristics of 4H-SIC power Diode||Authors:||Wei, G.
|Issue Date:||2007||Citation:||Wei, G.,Liang, Y.C.,Samudra, G.S. (2007). Realistic simulation of reverse characteristics of 4H-SIC power Diode. POWERENG 2007 - International Conference on Power Engineering - Energy and Electrical Drives Proceedings : 508-513. ScholarBank@NUS Repository. https://doi.org/10.1109/POWERENG.2007.4380164||Abstract:||Tins paper presents a methodology to simulate the reverse characteristics of realistic 4H-SiC pn junctions. The physical bases behind methodology of the simulation have been analyzed. The extensive collection of reported 4H-SiC pn junction diode data formed the basis of calibration of SYNOPSYS MEDICI for 4H-SiC pn junction simulation. Relevant parameters in the trap and photogeneration models are modified for realistic simulations. Motivation and justification of the modifications are presented. A universally applicable model parameter set for simulation of the reverse characteristics of practical 4H-SiC pn junction is proposed and verified against reported independent data not needed in the calibration step. © 2007 IEEE.||Source Title:||POWERENG 2007 - International Conference on Power Engineering - Energy and Electrical Drives Proceedings||URI:||http://scholarbank.nus.edu.sg/handle/10635/71558||DOI:||10.1109/POWERENG.2007.4380164|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Apr 20, 2019
checked on Apr 19, 2019
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.