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|Title:||Realistic simulation of reverse characteristics of 4H-SIC power Diode||Authors:||Wei, G.
|Issue Date:||2007||Citation:||Wei, G.,Liang, Y.C.,Samudra, G.S. (2007). Realistic simulation of reverse characteristics of 4H-SIC power Diode. POWERENG 2007 - International Conference on Power Engineering - Energy and Electrical Drives Proceedings : 508-513. ScholarBank@NUS Repository. https://doi.org/10.1109/POWERENG.2007.4380164||Abstract:||Tins paper presents a methodology to simulate the reverse characteristics of realistic 4H-SiC pn junctions. The physical bases behind methodology of the simulation have been analyzed. The extensive collection of reported 4H-SiC pn junction diode data formed the basis of calibration of SYNOPSYS MEDICI for 4H-SiC pn junction simulation. Relevant parameters in the trap and photogeneration models are modified for realistic simulations. Motivation and justification of the modifications are presented. A universally applicable model parameter set for simulation of the reverse characteristics of practical 4H-SiC pn junction is proposed and verified against reported independent data not needed in the calibration step. © 2007 IEEE.||Source Title:||POWERENG 2007 - International Conference on Power Engineering - Energy and Electrical Drives Proceedings||URI:||http://scholarbank.nus.edu.sg/handle/10635/71558||DOI:||10.1109/POWERENG.2007.4380164|
|Appears in Collections:||Staff Publications|
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