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https://doi.org/10.1109/ISDRS.2007.4422253
| Title: | Silicon nano-wire impact ionization transistors with multiple-gates for enhanced gate control and performance | Authors: | Toh, E.-H. Wang, G.H. Shen, C. Zhu, M. Chan, L. Heng, C.-H. Samudra, G. Yeo, Y.-C. |
Issue Date: | 2007 | Citation: | Toh, E.-H.,Wang, G.H.,Shen, C.,Zhu, M.,Chan, L.,Heng, C.-H.,Samudra, G.,Yeo, Y.-C. (2007). Silicon nano-wire impact ionization transistors with multiple-gates for enhanced gate control and performance. 2007 International Semiconductor Device Research Symposium, ISDRS : -. ScholarBank@NUS Repository. https://doi.org/10.1109/ISDRS.2007.4422253 | Abstract: | Silicon nano-wire Impact Ionization Multiple-Gate Field-Effect Transistor (I-MuGFET or I-FinFET) with excellent subthreshold swing of less than 5 mV/decade at room temperature were demonstrated. Both n- and p-channel I-FinFET devices were realized. The multiple-gate structure enhances the gate-to-channel coupling effect and the impact-ionization rate in the fin or nanowire channel, thereby reducing the breakdown voltage and giving excellent device performance. ©2007 IEEE. | Source Title: | 2007 International Semiconductor Device Research Symposium, ISDRS | URI: | http://scholarbank.nus.edu.sg/handle/10635/71771 | ISBN: | 1424418917 | DOI: | 10.1109/ISDRS.2007.4422253 |
| Appears in Collections: | Staff Publications |
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