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|Title:||Silicon nano-wire impact ionization transistors with multiple-gates for enhanced gate control and performance||Authors:||Toh, E.-H.
|Issue Date:||2007||Citation:||Toh, E.-H.,Wang, G.H.,Shen, C.,Zhu, M.,Chan, L.,Heng, C.-H.,Samudra, G.,Yeo, Y.-C. (2007). Silicon nano-wire impact ionization transistors with multiple-gates for enhanced gate control and performance. 2007 International Semiconductor Device Research Symposium, ISDRS : -. ScholarBank@NUS Repository. https://doi.org/10.1109/ISDRS.2007.4422253||Abstract:||Silicon nano-wire Impact Ionization Multiple-Gate Field-Effect Transistor (I-MuGFET or I-FinFET) with excellent subthreshold swing of less than 5 mV/decade at room temperature were demonstrated. Both n- and p-channel I-FinFET devices were realized. The multiple-gate structure enhances the gate-to-channel coupling effect and the impact-ionization rate in the fin or nanowire channel, thereby reducing the breakdown voltage and giving excellent device performance. ©2007 IEEE.||Source Title:||2007 International Semiconductor Device Research Symposium, ISDRS||URI:||http://scholarbank.nus.edu.sg/handle/10635/71771||ISBN:||1424418917||DOI:||10.1109/ISDRS.2007.4422253|
|Appears in Collections:||Staff Publications|
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