Please use this identifier to cite or link to this item: https://doi.org/10.1109/ISDRS.2007.4422253
Title: Silicon nano-wire impact ionization transistors with multiple-gates for enhanced gate control and performance
Authors: Toh, E.-H.
Wang, G.H.
Shen, C.
Zhu, M. 
Chan, L.
Heng, C.-H. 
Samudra, G. 
Yeo, Y.-C. 
Issue Date: 2007
Citation: Toh, E.-H.,Wang, G.H.,Shen, C.,Zhu, M.,Chan, L.,Heng, C.-H.,Samudra, G.,Yeo, Y.-C. (2007). Silicon nano-wire impact ionization transistors with multiple-gates for enhanced gate control and performance. 2007 International Semiconductor Device Research Symposium, ISDRS : -. ScholarBank@NUS Repository. https://doi.org/10.1109/ISDRS.2007.4422253
Abstract: Silicon nano-wire Impact Ionization Multiple-Gate Field-Effect Transistor (I-MuGFET or I-FinFET) with excellent subthreshold swing of less than 5 mV/decade at room temperature were demonstrated. Both n- and p-channel I-FinFET devices were realized. The multiple-gate structure enhances the gate-to-channel coupling effect and the impact-ionization rate in the fin or nanowire channel, thereby reducing the breakdown voltage and giving excellent device performance. ©2007 IEEE.
Source Title: 2007 International Semiconductor Device Research Symposium, ISDRS
URI: http://scholarbank.nus.edu.sg/handle/10635/71771
ISBN: 1424418917
DOI: 10.1109/ISDRS.2007.4422253
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

Page view(s)

28
checked on Nov 24, 2018

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.