Please use this identifier to cite or link to this item:
https://doi.org/10.1109/ISDRS.2007.4422253
DC Field | Value | |
---|---|---|
dc.title | Silicon nano-wire impact ionization transistors with multiple-gates for enhanced gate control and performance | |
dc.contributor.author | Toh, E.-H. | |
dc.contributor.author | Wang, G.H. | |
dc.contributor.author | Shen, C. | |
dc.contributor.author | Zhu, M. | |
dc.contributor.author | Chan, L. | |
dc.contributor.author | Heng, C.-H. | |
dc.contributor.author | Samudra, G. | |
dc.contributor.author | Yeo, Y.-C. | |
dc.date.accessioned | 2014-06-19T03:27:36Z | |
dc.date.available | 2014-06-19T03:27:36Z | |
dc.date.issued | 2007 | |
dc.identifier.citation | Toh, E.-H.,Wang, G.H.,Shen, C.,Zhu, M.,Chan, L.,Heng, C.-H.,Samudra, G.,Yeo, Y.-C. (2007). Silicon nano-wire impact ionization transistors with multiple-gates for enhanced gate control and performance. 2007 International Semiconductor Device Research Symposium, ISDRS : -. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/ISDRS.2007.4422253" target="_blank">https://doi.org/10.1109/ISDRS.2007.4422253</a> | |
dc.identifier.isbn | 1424418917 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/71771 | |
dc.description.abstract | Silicon nano-wire Impact Ionization Multiple-Gate Field-Effect Transistor (I-MuGFET or I-FinFET) with excellent subthreshold swing of less than 5 mV/decade at room temperature were demonstrated. Both n- and p-channel I-FinFET devices were realized. The multiple-gate structure enhances the gate-to-channel coupling effect and the impact-ionization rate in the fin or nanowire channel, thereby reducing the breakdown voltage and giving excellent device performance. ©2007 IEEE. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/ISDRS.2007.4422253 | |
dc.source | Scopus | |
dc.type | Conference Paper | |
dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
dc.contributor.department | NUS NANOSCIENCE & NANOTECH INITIATIVE | |
dc.description.doi | 10.1109/ISDRS.2007.4422253 | |
dc.description.sourcetitle | 2007 International Semiconductor Device Research Symposium, ISDRS | |
dc.description.page | - | |
dc.identifier.isiut | NOT_IN_WOS | |
Appears in Collections: | Staff Publications |
Show simple item record
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.