Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1758297
Title: Formation of sige nanocrystals in HfO 2 using in situ chemical vapor deposition for memory applications
Authors: Gupta, R.
Yoo, W.J. 
Wang, Y.
Tan, Z.
Samudra, G. 
Lee, S. 
Chan, D.S.H. 
Loh, K.P. 
Bera, L.K.
Balasubramanian, N.
Kwong, D.-L.
Issue Date: 24-May-2004
Citation: Gupta, R., Yoo, W.J., Wang, Y., Tan, Z., Samudra, G., Lee, S., Chan, D.S.H., Loh, K.P., Bera, L.K., Balasubramanian, N., Kwong, D.-L. (2004-05-24). Formation of sige nanocrystals in HfO 2 using in situ chemical vapor deposition for memory applications. Applied Physics Letters 84 (21) : 4331-4333. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1758297
Abstract: The formation of SiGe nanocrystals in situ on HfO 2 using multimode chemical vapor deposition (CVD) system at the temperature of 500 °C was analyzed. The memory characteristics of SiGe nanocrystals embedded in HfO 2 gate dielectrics were demonstrated using CMOS compatible fabrication processes. It was shown that the Ge concentration in SiGe nanocrystals increased with deposition time at equal Si/Ge flow rates. At room temperature from metal-oxide-semiconductor field effect transistor devices with a threshold voltage shift of about 0.5 V with the application of +4 V, memory effects from floating SiGe nanocrystals in HfO 2 were clearly observed.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/82378
ISSN: 00036951
DOI: 10.1063/1.1758297
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