Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1758297
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dc.titleFormation of sige nanocrystals in HfO 2 using in situ chemical vapor deposition for memory applications
dc.contributor.authorGupta, R.
dc.contributor.authorYoo, W.J.
dc.contributor.authorWang, Y.
dc.contributor.authorTan, Z.
dc.contributor.authorSamudra, G.
dc.contributor.authorLee, S.
dc.contributor.authorChan, D.S.H.
dc.contributor.authorLoh, K.P.
dc.contributor.authorBera, L.K.
dc.contributor.authorBalasubramanian, N.
dc.contributor.authorKwong, D.-L.
dc.date.accessioned2014-10-07T04:28:39Z
dc.date.available2014-10-07T04:28:39Z
dc.date.issued2004-05-24
dc.identifier.citationGupta, R., Yoo, W.J., Wang, Y., Tan, Z., Samudra, G., Lee, S., Chan, D.S.H., Loh, K.P., Bera, L.K., Balasubramanian, N., Kwong, D.-L. (2004-05-24). Formation of sige nanocrystals in HfO 2 using in situ chemical vapor deposition for memory applications. Applied Physics Letters 84 (21) : 4331-4333. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1758297
dc.identifier.issn00036951
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82378
dc.description.abstractThe formation of SiGe nanocrystals in situ on HfO 2 using multimode chemical vapor deposition (CVD) system at the temperature of 500 °C was analyzed. The memory characteristics of SiGe nanocrystals embedded in HfO 2 gate dielectrics were demonstrated using CMOS compatible fabrication processes. It was shown that the Ge concentration in SiGe nanocrystals increased with deposition time at equal Si/Ge flow rates. At room temperature from metal-oxide-semiconductor field effect transistor devices with a threshold voltage shift of about 0.5 V with the application of +4 V, memory effects from floating SiGe nanocrystals in HfO 2 were clearly observed.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.1758297
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.contributor.departmentCHEMISTRY
dc.description.doi10.1063/1.1758297
dc.description.sourcetitleApplied Physics Letters
dc.description.volume84
dc.description.issue21
dc.description.page4331-4333
dc.description.codenAPPLA
dc.identifier.isiut000221404700065
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