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|Title:||Hot carrier reliability of strained N-MOSFET with lattice mismatched source/drain stressors||Authors:||Ang, K.-W.
|Issue Date:||2007||Citation:||Ang, K.-W., Wan, C., Chui, K.-J., Tung, C.-H., Balasubramanian, N., Li, M.-F., Samudra, G., Yeo, Y.-C. (2007). Hot carrier reliability of strained N-MOSFET with lattice mismatched source/drain stressors. Annual Proceedings - Reliability Physics (Symposium) : 684-685. ScholarBank@NUS Repository. https://doi.org/10.1109/RELPHY.2007.369569||Abstract:||The hot carrier reliability of a novel uniaxial tensile strained n-channel transistor with silicon-carbon (Si1-yCy) source and drain (S/D) regions is investigated for the first time. Strained n-FETs show reduced hot carrier lifetime than the control n-FETs when stressed at comparable I sub/Id ratio. Worst case hot carrier stressing is observed to occur at maximum substrate current Isub condition which leads to a higher drive current IDsat degradation as compared to the V GS= VDS stress. At nominal operating voltages, the strained n-FET is projected to have a hot carrier lifetime well exceeding the 10-years requirement, showing no severe reliability issues. © 2007 IEEE.||Source Title:||Annual Proceedings - Reliability Physics (Symposium)||URI:||http://scholarbank.nus.edu.sg/handle/10635/83804||ISBN:||1424409195||ISSN:||00999512||DOI:||10.1109/RELPHY.2007.369569|
|Appears in Collections:||Staff Publications|
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