Fast and slow dynamic NBTI components in p-MOSFET with SiON dielectric and their impact on device life-time and circuit application

Abstract

For the first time, we perform a systematic investigation of the fast and slow components of dynamic NBTI (DNBTI)in p-MOSFET with SiON gate dielectric. The new findings are: (1)The recent debate in the slow DNBTI component measured by conventional DC method [1-5] is clarified. We show evidence that the slow DNBTI is due to interface traps Nit generation and passivation. The conventional methods used over the past years seriously underestimate N it due to passivation of NU during measurement. (2) The fast DNBTI component measured by the fast method [7] is due to trapping and de-trapping of hole traps Not in SiON. The accumulative degradation increases with increasing stress frequency. Model simulations are in excellent agreement with all experiments. (3)We re-evaluate the impact of DNBTI on device lifetime and circuit applications in the light of this new finding.