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|Title:||Fast and slow dynamic NBTI components in p-MOSFET with SiON dielectric and their impact on device life-time and circuit application|
|Source:||Yang, T.,Li, M.F.,Shen, C.,Ang, C.H.,Zhu, C.,Yeo, Y.C.,Samudra, G.,Rustagi, S.C.,Yu, M.B.,Kwong, D.L. (2005). Fast and slow dynamic NBTI components in p-MOSFET with SiON dielectric and their impact on device life-time and circuit application. Digest of Technical Papers - Symposium on VLSI Technology 2005 : 92-93. ScholarBank@NUS Repository. https://doi.org/10.1109/.2005.1469225|
|Abstract:||For the first time, we perform a systematic investigation of the fast and slow components of dynamic NBTI (DNBTI)in p-MOSFET with SiON gate dielectric. The new findings are: (1)The recent debate in the slow DNBTI component measured by conventional DC method [1-5] is clarified. We show evidence that the slow DNBTI is due to interface traps Nit generation and passivation. The conventional methods used over the past years seriously underestimate N it due to passivation of NU during measurement. (2) The fast DNBTI component measured by the fast method  is due to trapping and de-trapping of hole traps Not in SiON. The accumulative degradation increases with increasing stress frequency. Model simulations are in excellent agreement with all experiments. (3)We re-evaluate the impact of DNBTI on device lifetime and circuit applications in the light of this new finding.|
|Source Title:||Digest of Technical Papers - Symposium on VLSI Technology|
|Appears in Collections:||Staff Publications|
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