Please use this identifier to cite or link to this item: https://doi.org/10.1109/.2005.1469225
Title: Fast and slow dynamic NBTI components in p-MOSFET with SiON dielectric and their impact on device life-time and circuit application
Authors: Yang, T.
Li, M.F. 
Shen, C.
Ang, C.H.
Zhu, C. 
Yeo, Y.C. 
Samudra, G. 
Rustagi, S.C.
Yu, M.B.
Kwong, D.L.
Issue Date: 2005
Source: Yang, T.,Li, M.F.,Shen, C.,Ang, C.H.,Zhu, C.,Yeo, Y.C.,Samudra, G.,Rustagi, S.C.,Yu, M.B.,Kwong, D.L. (2005). Fast and slow dynamic NBTI components in p-MOSFET with SiON dielectric and their impact on device life-time and circuit application. Digest of Technical Papers - Symposium on VLSI Technology 2005 : 92-93. ScholarBank@NUS Repository. https://doi.org/10.1109/.2005.1469225
Abstract: For the first time, we perform a systematic investigation of the fast and slow components of dynamic NBTI (DNBTI)in p-MOSFET with SiON gate dielectric. The new findings are: (1)The recent debate in the slow DNBTI component measured by conventional DC method [1-5] is clarified. We show evidence that the slow DNBTI is due to interface traps Nit generation and passivation. The conventional methods used over the past years seriously underestimate N it due to passivation of NU during measurement. (2) The fast DNBTI component measured by the fast method [7] is due to trapping and de-trapping of hole traps Not in SiON. The accumulative degradation increases with increasing stress frequency. Model simulations are in excellent agreement with all experiments. (3)We re-evaluate the impact of DNBTI on device lifetime and circuit applications in the light of this new finding.
Source Title: Digest of Technical Papers - Symposium on VLSI Technology
URI: http://scholarbank.nus.edu.sg/handle/10635/83730
ISSN: 07431562
DOI: 10.1109/.2005.1469225
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