Fast erasing and highly reliable MONOS type memory with HfO2 high-k trapping layer and SI3N4/SiO2 tunneling stack

Please use this identifier to cite or link to this item: https://doi.org/10.1109/IEDM.2006.346948

Title:	Fast erasing and highly reliable MONOS type memory with HfO2 high-k trapping layer and SI3N4/SiO2 tunneling stack
Authors:	Wang, Y.Q. Gao, D.Y. Hwang, W.S. Shen, C. Zhang, G. Samudra, G. Yeo, Y.-C. Yoo, W.J.
Issue Date:	2006
Citation:	Wang, Y.Q.,Gao, D.Y.,Hwang, W.S.,Shen, C.,Zhang, G.,Samudra, G.,Yeo, Y.-C.,Yoo, W.J. (2006). Fast erasing and highly reliable MONOS type memory with HfO2 high-k trapping layer and SI3N4/SiO2 tunneling stack. Technical Digest - International Electron Devices Meeting, IEDM : -. ScholarBank@NUS Repository. https://doi.org/10.1109/IEDM.2006.346948
Abstract:	A Si3N4/SiO2 double-tunneling layer is incorporated in a MONOS memory device structure with high-k HfO2 charge storage layer for NAND-type memory application. Fast erasure of charges trapped in the high-k layer is enabled by enhanced hole current, accomplishing a large memory window of 2.9 V with electrical stress at 17.5 V for 100 μs and at -18 V for 5 ms. Incorporation of 1.6-1.8 nm thick Si3N 4 in place of a part of the SiO2 tunneling layer resulted in fast program and erase (P/E) speed and small Vth shift over 104 endurance cycles.
Source Title:	Technical Digest - International Electron Devices Meeting, IEDM
URI:	http://scholarbank.nus.edu.sg/handle/10635/83731
ISBN:	1424404398
ISSN:	01631918
DOI:	10.1109/IEDM.2006.346948
Appears in Collections:	Staff Publications

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