1. ScholarBank@NUS

Yee Chia Yeo

rp09882

Collaboration Map View Statistics Email Alert RSS Feed

Profile

Full Name
Yee Chia Yeo
Variants
Yeo, Y.
Yeo Y.-C.
Yeo, Y.C.
Yeo, Y.-C.
Yeo., Y.-C.
 
Main Affiliation
 
Faculty
 
Email
eleyeoyc@nus.edu.sg
 

Publications

Refined By:
Date Issued:  [2000 TO 2023]

Results 181-200 of 414 (Search time: 0.005 seconds).

Issue DateTitleAuthor(s)
181Feb-2012In 0.53Ga 0.47As n-channel metal-oxide-semiconductor field-effect transistors with shallow metallic source and drain extensions and offset N + Doped Regions for Leakage SuppressionZhu, Z.; Gong, X.; Ivana; Yeo, Y.-C. 
1822012In situ boron (B) doped germanium (Ge:B) grown on (100), (110), and (111) silicon: Crystal orientation and b incorporation effectsHan, G. ; Zhou, Q. ; Guo, P.; Wang, W.; Yang, Y.; Yeo, Y.-C. 
1832007In situ silane passivation of gallium arsenide and deposition of high-permittivity gate dielectric for MOS applicationsZhu, M. ; Chin, H.-C.; Tung, C.-H.; Yeo, Y.-C. 
184Jun-2008In situ surface passivation and CMOS-compatible palladium-germanium contacts for surface-channel gallium arsenide MOSFETsChin, H.-C.; Zhu, M. ; Tung, C.-H.; Samudra, G.S. ; Yeo, Y.-C. 
185Jan-2011In situ surface passivation of gallium nitride for metalOrganic chemical vapor deposition of high-permittivity gate dielectricLiu, X.; Chin, H.-C.; Tan, L.-S. ; Yeo, Y.-C. 
1862008In-situ surface passivation and metal-gate/high-k dielectric stack formation for N-channel gallium arsenide metal-oxide-semiconductor field-effect transistorsChin, H.-C.; Zhu, M. ; Whang, S.-J. ; Tung, C.-H.; Samudra, G.S. ; Yeo, Y.-C. 
1872013In0.53Ga0.47As FinFETs with self-aligned molybdenum contacts and HfO2/Al2O3 gate dielectricZhang, X.; Guo, H.X.; Zhu, Z.; Gong, X.; Yeo, Y.-C. 
1882011In0.7Ga0.3 as channel n-MOSFET with self-aligned Ni-InGaAs source and drainZhang, X.; Guo, H.; Gong, X.; Zhou, Q. ; Lin, Y.-R.; Lin, H.-Y.; Ko, C.-H.; Wann, C.H.; Yeo, Y.-C. 
1892011In0.7Ga0.3As channel n-MOSFETs with a novel self-aligned Ni-InGaAs contact formed using a salicide-like metallization processZhang, X.; Guo, H.; Gong, X.; Zhou, Q. ; Lin, H.-Y.; Lin, Y.-R.; Ko, C.-H.; Wann, C.H.; Yeo, Y.-C. 
1902007Incorporation of tin in boron doped silicon for reduced deactivation of boron during post-laser-anneal rapid thermal processingLiu, F.; Tan, K.-M.; Wang, X.; Low, D.K.Y.; Lai, D.M.Y.; Lim, P.C.; Samudra, G. ; Yeo, Y.-C. 
1912001Incremental self-growing neural networks with the changing environmentSu, L.; Guan, S.U. ; Yeo, Y.C. 
1922015Influence of hydrogen surface passivation on Sn segregation, aggregation, and distribution in GeSn/Ge(001) materialsJohll, H.; Samuel, M.; Koo, R.Y.; Kang, H.C. ; Yeo, Y.-C. ; Tok E.S. 
1932013Influences of gate drive on pulsed current collapse recovery in AlGaN/GaN power HEMTsLi, Y.; Liang, Y.C. ; Samudra, G.S. ; Huang, H.; Yeo, Y.-C. 
1943-Dec-2007Injection-induced de-doping in a conducting polymer during device operation: Asymmetry in the hole injection and extraction ratesChia, P.-J. ; Chua, L.-L. ; Sivaramakrishnan, S. ; Zhuo, J.-M. ; Zhao, L.-H.; Sim, W.-S. ; Yeo, Y.-C. ; Ho, P.K.-H. 
1952009Integration of Al segregated NiSiGe/SiGe source/drain contact technology in p-FinFETs for drive current enhancementSinha, M.; Lee, R.T.P. ; Devi, S.N.; Lo, G.-Q.; Chor, E.F. ; Yeo, Y.-C. 
162013Integration of TaOx-based resistive-switching element and GaAs diodeXu Z.; Tong X. ; Yoon S.F. ; Yeo Y.C. ; Chia C.K.; Dalapati G.K.; Chi D.Z.
172007Interface barrier abruptness and work function requirements for scaling Schottky source-drain MOS transistorsAgrawal, N.; Chen, J. ; Hui, Z.; Yeo, Y.-C. ; Lee, S. ; Chan, D.S.H. ; Li, M.-F. ; Samudra, G.S. 
182007Interface dipole mechanism and NMOS Ni-FUSI gate work function engineering using rare-earth metal (RE)-based dielectric interlayersLim, A.E.-J.; Fang, W.-W.; Liu, F.; Lee, R.T.P. ; Samudra, G.S. ; Kwong, D.-L. ; Yeo, Y.-C. 
19Oct-2005Interface trap passivation effect in NBTI measurement for p-MOSFET with SiON gate dielectricYang, T.; Shen, C.; Li, M.F. ; Ang, C.H.; Zhu, C.X. ; Yeo, Y.-C. ; Samudra, G. ; Kwong, D.-L.
202009Inversion-type surface channel In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors with metal-gate/high-k dielectric stack and CMOS-compatible PdGe contactsChin, H.-C.; Liu, X.; Tan, L.-S. ; Yeo, Y.-C.