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|Title:||In0.7Ga0.3 as channel n-MOSFET with self-aligned Ni-InGaAs source and drain||Authors:||Zhang, X.
|Issue Date:||2011||Citation:||Zhang, X., Guo, H., Gong, X., Zhou, Q., Lin, Y.-R., Lin, H.-Y., Ko, C.-H., Wann, C.H., Yeo, Y.-C. (2011). In0.7Ga0.3 as channel n-MOSFET with self-aligned Ni-InGaAs source and drain. Electrochemical and Solid-State Letters 14 (2) : H60-H62. ScholarBank@NUS Repository. https://doi.org/10.1149/1.3516213||Abstract:||A self-aligned Ni-InGaAs metallic source and drain (S/D) technology for In0.7 Ga0.3 As channel n-MOSFETs (metal-oxide- semiconductor field-effect transistors) is reported. A process was developed for selective contact metallization on InGaAs, comprising a reaction of Ni with Inx Ga1-x As to form a metallic Ni-InGaAs material, and a selective removal of excess Ni using a wet etch. Ni-InGaAs has low sheet resistance, is ohmic on n- Inx Ga1-x As, and forms a Schottky contact on p- In x Ga1-x As. A self-aligned salicidelike integration scheme was used to realize In0.7 Ga0.3 As n-MOSFETs with self-aligned Ni-InGaAs metal S/D. n-MOSFETs with a gate length of 1 μm shows good transfer characteristics with an on-state/off-state drain current ratio of ∼ 103 and peak transconductance Gm of 74 μS/μm. © 2010 The Electrochemical Society.||Source Title:||Electrochemical and Solid-State Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/82526||ISSN:||10990062||DOI:||10.1149/1.3516213|
|Appears in Collections:||Staff Publications|
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