In0.7Ga0.3 as channel n-MOSFET with self-aligned Ni-InGaAs source and drain

Abstract

A self-aligned Ni-InGaAs metallic source and drain (S/D) technology for In0.7 Ga0.3 As channel n-MOSFETs (metal-oxide- semiconductor field-effect transistors) is reported. A process was developed for selective contact metallization on InGaAs, comprising a reaction of Ni with Inx Ga1-x As to form a metallic Ni-InGaAs material, and a selective removal of excess Ni using a wet etch. Ni-InGaAs has low sheet resistance, is ohmic on n- Inx Ga1-x As, and forms a Schottky contact on p- In x Ga1-x As. A self-aligned salicidelike integration scheme was used to realize In0.7 Ga0.3 As n-MOSFETs with self-aligned Ni-InGaAs metal S/D. n-MOSFETs with a gate length of 1 μm shows good transfer characteristics with an on-state/off-state drain current ratio of ∼ 103 and peak transconductance Gm of 74 μS/μm. © 2010 The Electrochemical Society.