Please use this identifier to cite or link to this item: https://doi.org/10.1149/1.3516213
Title: In0.7Ga0.3 as channel n-MOSFET with self-aligned Ni-InGaAs source and drain
Authors: Zhang, X.
Guo, H.
Gong, X.
Zhou, Q. 
Lin, Y.-R.
Lin, H.-Y.
Ko, C.-H.
Wann, C.H.
Yeo, Y.-C. 
Issue Date: 2011
Citation: Zhang, X., Guo, H., Gong, X., Zhou, Q., Lin, Y.-R., Lin, H.-Y., Ko, C.-H., Wann, C.H., Yeo, Y.-C. (2011). In0.7Ga0.3 as channel n-MOSFET with self-aligned Ni-InGaAs source and drain. Electrochemical and Solid-State Letters 14 (2) : H60-H62. ScholarBank@NUS Repository. https://doi.org/10.1149/1.3516213
Abstract: A self-aligned Ni-InGaAs metallic source and drain (S/D) technology for In0.7 Ga0.3 As channel n-MOSFETs (metal-oxide- semiconductor field-effect transistors) is reported. A process was developed for selective contact metallization on InGaAs, comprising a reaction of Ni with Inx Ga1-x As to form a metallic Ni-InGaAs material, and a selective removal of excess Ni using a wet etch. Ni-InGaAs has low sheet resistance, is ohmic on n- Inx Ga1-x As, and forms a Schottky contact on p- In x Ga1-x As. A self-aligned salicidelike integration scheme was used to realize In0.7 Ga0.3 As n-MOSFETs with self-aligned Ni-InGaAs metal S/D. n-MOSFETs with a gate length of 1 μm shows good transfer characteristics with an on-state/off-state drain current ratio of ∼ 103 and peak transconductance Gm of 74 μS/μm. © 2010 The Electrochemical Society.
Source Title: Electrochemical and Solid-State Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/82526
ISSN: 10990062
DOI: 10.1149/1.3516213
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