Please use this identifier to cite or link to this item:
https://doi.org/10.1149/1.3516213
DC Field | Value | |
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dc.title | In0.7Ga0.3 as channel n-MOSFET with self-aligned Ni-InGaAs source and drain | |
dc.contributor.author | Zhang, X. | |
dc.contributor.author | Guo, H. | |
dc.contributor.author | Gong, X. | |
dc.contributor.author | Zhou, Q. | |
dc.contributor.author | Lin, Y.-R. | |
dc.contributor.author | Lin, H.-Y. | |
dc.contributor.author | Ko, C.-H. | |
dc.contributor.author | Wann, C.H. | |
dc.contributor.author | Yeo, Y.-C. | |
dc.date.accessioned | 2014-10-07T04:30:25Z | |
dc.date.available | 2014-10-07T04:30:25Z | |
dc.date.issued | 2011 | |
dc.identifier.citation | Zhang, X., Guo, H., Gong, X., Zhou, Q., Lin, Y.-R., Lin, H.-Y., Ko, C.-H., Wann, C.H., Yeo, Y.-C. (2011). In0.7Ga0.3 as channel n-MOSFET with self-aligned Ni-InGaAs source and drain. Electrochemical and Solid-State Letters 14 (2) : H60-H62. ScholarBank@NUS Repository. https://doi.org/10.1149/1.3516213 | |
dc.identifier.issn | 10990062 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/82526 | |
dc.description.abstract | A self-aligned Ni-InGaAs metallic source and drain (S/D) technology for In0.7 Ga0.3 As channel n-MOSFETs (metal-oxide- semiconductor field-effect transistors) is reported. A process was developed for selective contact metallization on InGaAs, comprising a reaction of Ni with Inx Ga1-x As to form a metallic Ni-InGaAs material, and a selective removal of excess Ni using a wet etch. Ni-InGaAs has low sheet resistance, is ohmic on n- Inx Ga1-x As, and forms a Schottky contact on p- In x Ga1-x As. A self-aligned salicidelike integration scheme was used to realize In0.7 Ga0.3 As n-MOSFETs with self-aligned Ni-InGaAs metal S/D. n-MOSFETs with a gate length of 1 μm shows good transfer characteristics with an on-state/off-state drain current ratio of ∼ 103 and peak transconductance Gm of 74 μS/μm. © 2010 The Electrochemical Society. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1149/1.3516213 | |
dc.source | Scopus | |
dc.type | Article | |
dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
dc.description.doi | 10.1149/1.3516213 | |
dc.description.sourcetitle | Electrochemical and Solid-State Letters | |
dc.description.volume | 14 | |
dc.description.issue | 2 | |
dc.description.page | H60-H62 | |
dc.description.coden | ESLEF | |
dc.identifier.isiut | 000285158800018 | |
Appears in Collections: | Staff Publications |
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