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|Title:||In situ surface passivation of gallium nitride for metalOrganic chemical vapor deposition of high-permittivity gate dielectric||Authors:||Liu, X.
|Keywords:||Gallium nitride (GaN)
in situ surface passivation
interface state density
|Issue Date:||Jan-2011||Citation:||Liu, X., Chin, H.-C., Tan, L.-S., Yeo, Y.-C. (2011-01). In situ surface passivation of gallium nitride for metalOrganic chemical vapor deposition of high-permittivity gate dielectric. IEEE Transactions on Electron Devices 58 (1) : 95-102. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2010.2084410||Abstract:||We report the demonstration of novel techniques for surface passivation of gallium nitride (GaN), comprising the steps of in situ vacuum anneal (VA) and silane-ammonia (SiH4 + NH3) or silane (SiH4) treatment for GaN, prior to the formation of high-permittivity gate dielectric in a multichamber metalorganic chemical vapor deposition tool. The effects of VA temperature and the SiH4 + NH3 or (SiH4) treatment temperature on interface quality was investigated. High-temperature capacitancevoltage characterization was also performed to probe the interface states near the midgap of GaN. Interface state density Dit as a function of energy was extracted. Without in situ passivation, a control TaN/HfAlO/GaN capacitor has a midgap Dit of ∼2.0 × 10 12cm-2. -emlV-1. This is reduced ∼4.0 × 1011 cm-2 .-eV-1 and ∼2.0 × 1010 cm-2.-emlV -1 for samples that received the in situ SiH4 + NH 3 treatment and in situ SiH4 treatment, respectively. © 2010 IEEE.||Source Title:||IEEE Transactions on Electron Devices||URI:||http://scholarbank.nus.edu.sg/handle/10635/82521||ISSN:||00189383||DOI:||10.1109/TED.2010.2084410|
|Appears in Collections:||Staff Publications|
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