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|Title:||In 0.53Ga 0.47As n-channel metal-oxide-semiconductor field-effect transistors with shallow metallic source and drain extensions and offset N + Doped Regions for Leakage Suppression||Authors:||Zhu, Z.
|Issue Date:||Feb-2012||Citation:||Zhu, Z., Gong, X., Ivana, Yeo, Y.-C. (2012-02). In 0.53Ga 0.47As n-channel metal-oxide-semiconductor field-effect transistors with shallow metallic source and drain extensions and offset N + Doped Regions for Leakage Suppression. Japanese Journal of Applied Physics 51 (2 PART 2) : -. ScholarBank@NUS Repository. https://doi.org/10.1143/JJAP.51.02BF03||Abstract:||In this paper, we report the first demonstration of In 0.53Ga 0.47As n-channel metal-oxide-semiconductor field-effect transistors (n-MOSFETs) with a shallow metallic source/drain extension (SDE) and offset n + regions for leakage suppression. A SDE-last process flow was developed, i.e., the Ni-InGaAs metallic SDE was formed last, after formation of n + doped source/drain (S/D) regions. The n + S/D regions were offset from the gate edge with the use of sacrificial spacers. After spacer removal, self-aligned highly-abrupt Ni-InGaAs SDE was formed. Junction leakage between drain and body was effectively suppressed by ∼40 times by the n + S/D regions. © 2012 The Japan Society of Applied Physics.||Source Title:||Japanese Journal of Applied Physics||URI:||http://scholarbank.nus.edu.sg/handle/10635/82518||ISSN:||00214922||DOI:||10.1143/JJAP.51.02BF03|
|Appears in Collections:||Staff Publications|
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